RENESAS 2SA778

2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
REJ03G0628-0300
Rev.3.00
Jul 30, 2007
Application
High voltage medium speed switching
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 1 of 7
2SA778(K)
–150
–150
–5
–50
200
150
–55 to +150
2SA778A(K)
–180
–180
–5
–50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
2SA778(K), 2SA778A(K)
Electrical Characteristics
(Ta = 25°C)
Collector to base
breakdown voltage
V(BR)CBO
2SA778(K)
Min
Typ
Max
–150
—
—
Collector to emitter
breakdown voltage
Collector cutoff current
V(BR)CER
–150
—
—
–180
—
ICBO
IEBO
hFE
—
—
—
30
—
—
—
100
–1.0
—
–1.0
—
—
—
—
40
Collector to emitter
saturation voltage
VCE(sat)
—
–0.3
–1.0
Base to emitter saturation
voltage
VBE(sat)
—
–0.77
Cob
—
fT
Turn on time
Turn off time
Storage time
Item
Emitter cutoff current
DC current transfer ratio
Collector output
capacitance
Gain bandwidth product
Symbol
2SA778A(K)
Min
Typ
Max
–180
—
—
Unit
V
Test conditions
IC = –50 µA, IE = 0
—
V
—
—
—
100
—
–1.0
–1.0
200
µA
µA
µA
IC = –50 µA,
RBE = 30 kΩ
VCB = –100 V, IE = 0
VCB = –150 V, IE = 0
VEB = –5 V, IC = 0
—
–0.3
–1.0
V
IC = –15 mA,
IB = –1 mA
–1.0
—
–0.77
–1.0
V
IC = –15 mA,
IB = –1 mA
—
10
—
—
10
pF
VCB = –10 V, IE = 0,
f = 1 MHz
—
50
—
—
50
—
MHz
ton
toff
—
—
135
1.7
—
—
—
—
135
1.7
—
—
ns
µs
tstg
—
—
1.0
—
—
1.0
µs
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 2 of 7
VCE = –3 V,
IE = –15 mA
VCE = –3 V,
IC = –15 mA
VCC = –10.3 V
IC = 10 IB1 = –10
IB2 = –10 mA
VCC = –10 V,
IC =–17 mA
IB1 = –1mA,
IB2 = –12 mA
2SA778(K), 2SA778A(K)
Main Characteristics
Typical Output Characteristics (1)
–50
300
Collector Current IC (mA)
Collector power dissipation Pc (mW)
Maximum Collector Dissipation Curve
200
100
–40
P
.0
C
=
–0.6
–0.5
20
0
m
W
–0.4
–0.3
–0.2
–0.15
–20
–0.1
–10
–0.05 mA
IB = 0
0
50
100
150
0
–1
–2
–3
–4
–5
Collector to Emitter Voltage VCE (V)
Collector Cutoff Current vs.
Collector to Base Voltage
Typical Output Characteristics (2)
–0.5
–300
–0.4
Collector Current ICBO (nA)
Collector Current IC (mA)
–1
–30
Ambient Temperature Ta (°C)
–4
–3
–0.3
–2
–0.2
– 1 µA
–0.1
IB = 0
0
–40
–80
–160
VCE = –3 V
75
25
0
80
Ta =
–25
°C
60
40
–1
–2
–5
50
–3
Ta =
–1.0
25°C
–10
–20
Collector Current IC (mA)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 3 of 7
–40
–80 –120 –160 –200
Collector to Base Voltage VCB (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
50
100
75
–10
0
Collector to emitter saturation voltage
VCE (sat) (V)
120
100
–30
–200
DC Current Transfer Ratio vs.
Collector Current
140
125
–100
–0.3
–120
Collector to Emitter Voltage VCE (V)
DC current transfer ratio hFE
–0.9
–0.8
–0.7
–50
–2.0
–1.6
IC = 10 IB
–1.2
–0.8
–0.4
0
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
–50
2SA778(K), 2SA778A(K)
–0.9
IC = 10 IB
–0.8
–25
0
–0.7
25
–0.6
Ta
50
5°C
=7
–0.5
–0.4
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
–50
Input and Output Capacitance vs.
Voltage
Collector output capacitance Cob (pF)
Emitter input capacitance Cib (pF)
Base to emitter saturation voltage
VBE (sat) (V)
Base to Emitter Saturation Voltage vs.
Collector Current
12
10
8
6
Cob (IE = 0)
4
2
0
–0.5 –1.0
–2
–5
–10
–20
Gain Bandwidth Product vs.
Collector Current
Switching Time vs. Collector Current
5
60
VCE = –3 V
IC = 10 IB1 = –10 IB2
2
Switching time t (µs)
50
40
30
20
toff
tstg
1.0
0.5
0.2
ton
0.1
td
0.05
10
0.02
0
–0.5 –1.0
–2
–5
–10
–20
Collector Current IC (mA)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 4 of 7
–50
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Collector Current IC (mA)
Gain bandwidth product fT (MHz)
f = 1 MHz
Cib (IC = 0)
–50
0.01
–0.5–1.0 –2
–5 –10 –20 –50
Collector Current IC (mA)
2SA778(K), 2SA778A(K)
Switching Time Test Circuit
ton, toff Test Circuit
D.U.T.
6k
6k
0.002
Switching Time Test Circuit
tstg Test Circuit
510
D.U.T
0.1
CRT
1k
2.4 k
0.002
50
P.G.
tr, tf 15ns
PW 5µs
duty ratio 10%
+
6V
– +
50
–
50
–10.3 V
Unit R : Ω
C : µF
P.G.
tr, tf 5ns
PW 5µs
duty ratio = 50%
90%
tstg
10%
10%
90%
90%
ton
16
–
–3 V
+ +
50
–
50
–10 V
Unit R : Ω
C : µF
Response Waveform
10%
td
0.002
CRT
50
Response Waveform
0
Input
–13 V
0
Output
0.002
0.1
toff
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 5 of 7
+7 V
Input
0
0
Output
10%
10%
tstg
2SA778(K), 2SA778A(K)
Package Dimensions
Package Name
TO-92(1)
JEITA Package Code
SC-43A
Previous Code
TO-92(1) / TO-92(1)V
RENESAS Code
PRSS0003DA-A
4.8 ± 0.3
MASS[Typ.]
0.25g
Unit: mm
2.3 Max
0.7
0.60 Max
0.55 Max
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5 Max
1.27
2.54
Ordering Information
Part No.
2SA778KTZ
2SA778AKTZ
Note:
Quantity
2500
Shipping Container
Hold Box, Radial Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 6 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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Colophon .7.0