DS3100 Reliability Report

2/8/2007
PRODUCT RELIABILITY REPORT
FOR
DS3100, Rev A1
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Ken Wendel
Reliability Engineering Manager
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : [email protected]
ph: 972-371-3726
fax: 972-371-6016
mbl: 214-435-6610
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all
Dallas Semiconductor products:
DS3100, Rev A1
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann’s Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure
mechanisms or their activation energies are unknown. All deratings will be done from the stress
ambient temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms,
which are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or
industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or
their B are unknown. All deratings will be done from the stress voltage to the maximum operating
voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical
model at the 60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT
rate is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS):
18507
FITS:
6.2
DEVICE HOURS:
157500
FAILS:
0
Only data from Operating Life or similar stresses are used for this calculation.
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 3
Volts
The reliability data follows. At the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data. "*" after DATE CODE denotes specific product data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
Laser/TEOS Ox - Pass/Nit -PreLP+GenLP
248 x 248
3800000
Aluminum / 1% Silicon / 0.5% Copper
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT
QTY FAILS
ESD SENSITIVITY
0607 *
EOS/ESD S5.1 HBM 500 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0607 *
EOS/ESD S5.1 HBM 1000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0607 *
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0607 *
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
3
LATCH-UP
0607 *
JESD78, I-TEST 125C
6
0
LATCH-UP
0607 *
JESD78, V-SUPPLY TEST 125C
6
FA#
No FA
0
3
Total:
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT
HIGH TEMP OP LIFE
0452
125C, 3.5V (PSA) & 2.0V (PSB)
1000 HRS
45
0
HIGH TEMP OP LIFE
0527
125C, 3.5V (PSA) & 2.0V (PSB)
1000 HRS
45
0
HIGH TEMP OP LIFE
0607 *
125C, 3.5V (PSA) & 2.0V (PSB)
1000 HRS
45
0
HIGH TEMP OP LIFE
0625
125C, 2.0V (PSA) & 3.5V (PSB)
500
45
0
HRS
Total:
FAILURE RATE:
MTTF (YRS):
18507
FITS:
6.2
DEVICE HOURS:
157500
FAILS:
0
QTY FAILS
0
FA#