RENESAS 2SA1083

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April 1, 2003
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2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1083
2SA1084
2SA1085
Unit
Collector to base voltage
VCBO
–60
–90
–120
V
Collector to emitter voltage
VCEO
–60
–90
–120
V
Emitter to base voltage
VEBO
–5
–5
–5
V
Collector current
IC
–100
–100
–100
mA
Emitter current
IE
100
100
100
mA
Collector power dissipation
PC
400
400
400
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
2
2SA1083, 2SA1084, 2SA1085
Electrical Characteristics (Ta = 25°C)
2SA1083
2SA1084
2SA1085
Item
Symbol Min
Typ
Max
Min
Typ Max
Min
Collector to base
breakdown voltage
V(BR)CBO –60
—
—
–90
—
—
–120 —
—
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –60
—
—
–90
—
—
–120 —
—
V
IC = –1 mA,
RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO –5
—
—
–5
—
—
–5
—
—
V
IE = –10 µA, IC = 0
Collector cutoff current
ICBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
µA
VCB = –50 V, I E = 0
Emitter cutoff current
IEBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
µA
VEB = –2 V, IC = 0
DC current transfer ratio hFE*1
250
—
800
250
—
800
250
—
800
Collector to emitter
saturation voltage
VCE(sat)
—
—
–0.2
—
—
–0.2
—
—
–0.2
Base to emitter voltage
VBE
—
–0.6 —
—
–0.6 —
—
Gain bandwidth product fT
—
90
—
—
90
—
Collector output
capacitance
Cob
—
3.5
—
—
3.5
Noise voltage reffered
to input
en
—
0.5
—
—
0.5
Note:
Typ Max
Unit Test conditions
VCE = –12 V,
IC = –2 mA
V
IC = –10 mA,
IB = –1 mA
–0.6 —
V
VCE = –12 V,
IC = –2 mA
—
90
—
MHz VCE = –12 V,
IC = –2 mA
—
—
3.5
—
pF
VCB = –10 V, I E = 0,
f = 1 MHz
—
—
0.5
—
nV/
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h FE as follows.
D
E
250 to 500
400 to 800
3
2SA1083, 2SA1084, 2SA1085
Typical Output Characteristics (1)
–50
40
–1
Collector current IC (mA)
Collector power dissipation PC (mW)
Maximum Collector Dissipation Curve
600
400
200
–40
–60
–30
P
C
–40
.4 W
–20
–20 µA
–10
0
150
50
100
Ambient Temperature Ta (°C)
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
–16
–12
–35
VCE = –12 V
–30
–25
–20
–15
–8
–10
–4
–5 µA
IB = 0
0
Typicaol Transfer Characteristics
–10
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
–4
0
–20
Collector current IC (mA)
=0
IB = 0
0
4
20
0
–10
–80
–1
–5
–2
–1.0
–0.5
–0.2
–0.1
0
–0.2
–0.4
–0.6
–0.8
Base to Emitter Voltage VBE (V)
–1.0
2SA1083, 2SA1084, 2SA1085
DC Current Transfer Ratio vs.
Collector Current
VCE = –12 V
Pulse
2,000
1,000
500
200
100
50
–0.1
–0.3 –1.0 –3
–10 –30
Collector Current IC (mA)
Collector to emitter saturation voltage
VCE(sat) (V)
DC current teransfer ratio hFE
5,000
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
–0.01
–1
–100
–2
–1.0
–0.5
–0.2
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage
VBE(sat) (V)
2,000
IC = 10 IB
–5
–0.1
–1
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
–10
IC = 10 IB
VCE = –12 V
1,000
500
200
100
50
20
–1
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
5
2SA1083, 2SA1084, 2SA1085
100
Contours of Constant Noise Figure (1)
IE = 0
f = 1 MHz
50
20
10
5
2
100
Singnal source resistance Rg (kΩ)
Collector output capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
30
10
3
1.0
0.3
0.1
6
Collector Current IC (mA)
10
3
1.0
0.3
NF = 0.5 dB
1 2 4 6
0.1
10
0.03
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector Current IC (mA)
6
Contours of Constant Noise Figure (3)
100
Singnal source resistance Rg (kΩ)
Singnal source resistance Rg (kΩ)
VCE = –6 V
f = 120 Hz
1
2
4
0.03
Contours of Constant Noise Figure (2)
30
NF = 0.5 dB
10
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
1
–0.5 –1.0 –2
–5 –10 –20
–50
Collector to Base Voltage VCB (V)
100
VCE = –6 V
f = 1 kHz
VCE = –6 V
f = 10 Hz
30
10
3
NF = 0.5 dB
1.0
0.3
12
4 6 10
0.1
0.03
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector Current IC (mA)
2SA1083, 2SA1084, 2SA1085
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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7