TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits. SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796 Symbol G o Packaging JEDEC TO-205AF DRAIN(CASE) SOURCE GATE NI Semi-Conductor? reserves the right to change lest conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the lime of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in iis use. NI Semi-Conductors entourages customers to vvrih, that datasheets are current before placing orders. 2N6796 Absolute Maximum Ratings Tc = 25°C. Unless Otherwise Specified 2N6796 UNITS 100 V Drain to Source Breakdown Voltage (Note 1) 100 Drain to Gate Voltage (RGS = 20kO) (Note 1) VDGR V 8 Continuous Drain Current (Note 1) ID A 5 TC=100°C ID A 32 A Pulsed Drain Current (Note 1) IDM ±20 Gate to Source Voltage (Note 1) VGS V 8 Continuous Source Current (Body Diode) Is A 32 A Pulse Source Current (Body Diode) ISM 25 Maximum Power Dissipation (Figure 1) PD W 0.20 Linear Derating Factor (Figure 1) VW°C -55 to 150 Operating and Storage Temperature Tj T$TG °C Maximum Temperature for Soldering 300 °C Leads at 0.063in (1.6mm) from Case for 10s T|_ Package Body for 10s, See Techbrief 334 Tpkg 260 °C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Tj = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS Drain to Source On Resistance (Note 2) Turn-On Delay Time - - 250 HA VDS = 8ov, VGS = ov. TC = 125°C - - 1000 |iA ID = 8A, VGS = 10V - 1.56 V VGS = ±2ov - ±100 nA ID = 5A, VGS = 1 ov - 0.180 ft ID = 5A. V GS =10V,T C = 1250C - 0.350 ii VSD Tc = 25°C, ls = 8A, VGS = OV 0.75 - 1.5 V 9fs VDS = sv. ID = 5A 3 5.5 9 s VDD = 30V, ID = 5A, RG = son (Figure 1 7) MOSFET Switching Times are Essentially Independent of Operating Temperature . - 30 ns - 75 ns - 40 ns ns 'd(ON) tr Turn-Off Delay Time td(OFF) Fall Time CISS 0.14 . tf Input Capacitance V V VGS = VDS. b = °-5mA VDS=100V, VGS = OV tass Rise Time 4 - rDS(ON) Diode Forward Voltage (Note 2) MAX 2 VDS(ON) Forward Transconductance (Note 2) UNITS TYP 100 bss j Gate to Source Leakage Current MIN ID = 0.25mA, VGS = 0V VGS(TH) Zero Gate Voltage Drain Current On-State Drain Current (Note 2) TEST CONDITIONS SYMBOL VDS = 25V, VQS = OV, f = 1 MHz, (Figure 11) - - 45 350 600 900 PF Output Capacitance COSS 150 300 500 PF Reverse Transfer Capacitance CRSS 50 100 150 pF Thermal Resistance Junction to Case ROJC - 175 Thermal Resistance Junction to Ambient R9JA Safe Operating Area SOA ' 5 Free Air Operation VDS = 80V, ID = 310mA 25 - - VDS = 3.1 2V, ID = 8A 25 - - MIN TYP MAX - 300 °C/W °c/w w i W Source to Drain Diode Specifications | PARAMETER i Reverse Recovery Time Reverse Recovered Charge SYMBOL TEST CONDITIONS tir Tj = 150°C. ISD = 8A. dlSD/dt = 100A/HS QRR Tj= 150°C, ISD = 8A, d!SD/dt= 100A/HS j : 1.5 UNITS ns ' - fiC