<^£mi-Conauctoi t-Proaucts., U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212) 227-6005
2N4342 - 2N4343 - 2N4360
UlSA
FAX: (973) 376'8960
P-CHANNEL FIELD EFFECT TRANSISTORS
DIFUSSED SILICON PLAN.4R TRANSSITORS
•
•
•
•
LOW NOISE VOLTAGE -• 0,08 uV//Hz (MAX) @ 100 Hz
HIGH YI, •• 4000 umhos (MIN)
LOW rDS (on) •- 350 Q (MAX)
LOW COST EPOXY PACKAGE
PHYSICAL DIMENSIONS
.216 n ,,
ABSOLUTE MAXIMUM RATINGS (Note 1)
Maximum Temperatures
Operating Junction Temperature
Storage Temperature .
Soldering Temperature (10 seconds time limit)
-55°C to +125°C
B Vo/-/A
oOO
DSO
BV _
B VY,CV,
Source to Gate Breakdown Voltage
Drain to Source Breakdown Voltage
Drain to Gate Breakdown Voltage
t
.120
.100
'
^^\
|'
.250
.140
t
1
3 LEADS -,'' fl 0 0
26(KC
Maximum Voltages
^
"^
) i
I
;'i
Ceram|c y j ||
125°C
Maximum Power Dissipation
Total Dissipation at 25°C Case Temperature (Note 2)
at 65°C Case Temperature (Note 2)
at 25°C Ambient Temperature (Note 2)
^
.185 DIA '
:°f 6 DlA.
-400 M ' N
U U U
1
l^^-100 DRAIN
.050 -j ;— i /-Lead No. 2
SOURCE
JH-^
GATE
Lead No. 1 -*/1 ,X (\- Lead No. 3
0.5 Watt
0.3 Watt
0.2 Watt
, r*o' I <A
45- .'V^y
2N4360
-20 Volts
2N4342
2N4343 OTOFLAT
-25 Volts
-20 Volts
-25 Volts
-?,0 V"ltS
-?« Vnlr«
\
1
v <
NOTfS All ftmercicrc in inches
^Sl^r '"'•'"
ELECTRICAL CHARACTERISTICS (25°C Free Air Temperature unless otherwise noted)
Symbol
en
Characteristic
Equivalent Input Noise Voltage
(f = 100 Hz|
Noise Figure
Min.
2N4360
Typ. Max.
0,02
0.08
0.1
1.5
•/ Y t j
Forward Transadmittance {i = 1.0 kHz) 2000 .1000
35
Y| ?
O'jiput Admittance (f = 1.0kHz)
20
^ BV,..
Gate to SuurO*.- Breakduwn Voltage
3.0
10
:} l r s ,
Drain Current
0.7
5.0
V., ,
C.llf.. t u S n u r c f Voltage
Go
V,,,
G.it<? t i i S « u r r e Vi.lIJt't
V,
,
Gale to Source Voltayt.
UO
•f V GS (off.)
Gate to Source Cutoff Voltage
0.15
1.,^,
Gute Reverse Curreiit
.002
U,,-,(65 C) G;ite Reverse Current
ObO
15
C
Input C:ip.icit:u:cc (f - 1.0 MHz)
3.0
C
Reverse Transfer Cup:icit:iiu:e
'i3
(f ' 1.0 MHz)
350
r^lon)
Drain "On" Resistance (f - i ,0kHz)
1500
3000
R (Y }
FurwarM Tr.lM,sOL.niiuctar.i.ie
'' ls
(f ^ 1.0 MHz)
8000
100
XF
Min.
?M4342
Typ, Max
Min.
0.02 0.08
0.1
2N4343
Typ.
Max.Units
0.02 0.08
0.1
1.5
6000
35
8000
100
10
18
30
1.8
6.0
9.0
1.5
(iV/y/Hi
cm
(r = too HZ)
DO
2000
3500
25
6000 4000
75
26
4.0
7.0
12
0.7
3.0
5.0
25
9.0
to
10
0.5
20
0.15
0.002
15
5.5
10
0.5
20
0.15
0.002
5.0
3.0
5.0
3.0
300
2500
700
700
500
10
15
3000
180
5500
10
0.5
20
5.0
350
Test Conditions
VD,
= -10
V
V GS
= 0
VDS = - i o v VGS - o
umhos
RG
VDS
= 1.0 MS! BW = 15
= -10 V Vcs = 0
" mhQ9
Volts
mA
Volts
VDS
IG
Vos
VDS
" '10 V VGS = °
= 10 ,,A VDS = 0
= -10 V Vcs = 0
= -10 V ID
^ 0 . 3 mA
Volts
VDS = -10
Volts
Volts
nA
VDS = -10 V ID
V(,s ' -10 V I 0
Vr = 15 V V_.
Ofa
DS
VGS ' i5 V
VDS
VDS = - 1 0 V VGS
VDg =-10 V VQS
"A
PF
pF
Ohms
,.mhos
NOTES:
(1) rhfse r;itint;s ;ire limiting values :ibuve wbii;h the serviceability of ;iny individual semiconductor device may lie impaired,
thermal resistance of 200' C Watt (derating; f
(2) Thfvse ratings 'Uvtr ;\m j ' i n c t i - m temperature (it 125' C and junction to ca&(?
therm.U re.-iistuncL' of 500 c Wutt (derating f.ictor of 2,0 mW/ : C).
(3) Buth 2N4342 and 2N4343 typie.il carves apply to 2N4360.
V
ID
Hz
0.4 mA
= 1.0 mA
1.0 H A
- 0
' °
= 0
= 0
ID
= 0
VC! = 0
Vn. ' -10 V ¥„ = 0
LJQ
IjO
,1 patiT.t'.i:! F.ui'Lhiki pr
,ir of 5.0mW/"C): junction to ambient
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information rumisncd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N I
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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