, IJ nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Power MOSFET PRODUCT SUMMARY 200 VDS(V) RDS(on) VGS=10V (ty IRF620, SJHF620 0.80 Qg (Max.) (nC) 14 Qgs(nC) 3.0 7.9 Qgd (nC) Configuration FEATURES • Dynamic dV/dt Rating Single D • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling TO-220AB J, • Simple Drive Requirements The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. o S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF620PbF Lead (Pb)-free SiHF620-E3 IRF620 SiHF620 SnPb ABSOLUTE MAXIMUM RATINGS O'c = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT VDS VGS ±20 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc = 25 °C VyyUtlUV mnoo TC = 1 00 C Pulsed Drain Current3 ID 'DM 200 UNIT V 5.2 3.3 A 18 0.40 w/°c Single Pulse Avalanche Energyb EAS 110 mJ Repetitive Avalanche Current3 IAR 5.2 A Repetitive Avalanche Energy3 EAR 5.0 mJ Linear Derating Factor Maximum Power Dissipation T0 = 25 "C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10s 6-32 or M3 screw PD 50 W dV/dt 5.0 V/ns Tj, Tstg -55 to + 150 300d °C 10 Ibf • in 1.1 N-m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting Tj = 25 °C, L = 6.1 mH, Rg = 25 Q, IAS = 5.2 A (see fig. 12). c. ISD < 5.2 A, dl/dt < 95 A/us, VDD < VDS, Tj < 150 °C. d. 1.6 mm from case. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF620, SIHF620 THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 PARAMETER UNIT °c/w SPECIFICATIONS (Tj = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS AVDS/Tj VGS = 0 V, ID = 250 uA 200 - - V Reference to 25 °C, ID = 1 mA - 0.29 - v/°c VDS = VGS, ID = 250 uA VGS = ± 20 V 2.0 - 4.0 V - - ±100 nA VDS = 200 V, VGS = 0 V - - 25 - - 250 TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VQS(th) bss IDSS RcS(on) 9fs VDS = 160 V, VGS = 0 V, Tj = 125 °C VGS = 10V !D = 3.1A b VDS = 50V, b = 3.1 A uA - - 0.80 n 1.5 - - 5 - 260 - - 100 - Dynamic Input Capacitance Q55 Output Capacitance Coss Reverse Transfer Capacitance VGS - 0 V, VDS = 25 V, f = 1 .0 MHz, see fig. 5 Cres - 30 - Total Gate Charge Qg - - 14 Gate-Source Charge Qgs - - 3.0 Vrs-10V VGS-TUV b -4.8 A, VDS -160V, see fig. 6 and 13b Gate-Drain Charge Q9d - - 7.9 Turn-On Delay Time td(on) - 7.2 - - 22 - - 19 - - 13 - 4.5 - - 7.5 - - - 5.2 - - 18 Rise Time Turn-Off Delay Time tr 'd(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance Ls V D D =100V, ID = 4.8 A, Rg = 18 n, RD = 20O, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact s\ (I NI Tj vll^* - 4 PF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Is Pulsed Diode Forward Current3 ISM Body Diode Voltage VSD MOSFET symbol showing the integral reverse p - n junction diode /fjZik (,(J j*]_t) xtif - - 1.8 V trr - 150 300 ns Body Diode Reverse Recovery Charge Qrr - 0.91 1.8 uC Forward Turn-On Time ton Body Diode Reverse Recovery Time Tj = 25 °C, ls = 5.2 A, VGS = 0 V» A Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)