ZPioduoti, Una. J TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 378-8960 U.SA MRF233 (SILICON) The R.F Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON ...designed for 12.5 Volt, mid-band large-signal amplifier applications in industrial and commercial FM equipment operating in the 40 to 100 MHz range. • Specified 12.6 Volt, 90 MHz Characteristics Output Power - 1 5 Watts Minimum Gain - 10 dB Efficiency - B5% • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Characterized with Series Equivalent Large-Signal Parameters Impedance • Characterized with Parallel Equivalent Large-Signal Parameters Impedance , ^ ,- ft ! _ [n^M 1 ^TTi r J— i MAXIMUM RATINGS Rating Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dinipation ej>T c - 26°C HI Derate Above 25°C Storage Temperature Range Stud Torque 12] THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case -i — A r ;— -Jpi 1 =?*-""fii IL. u Symbol Velue Unit VCEO VCBO VEBO 18 Vdc 36 Vdc 4.0 Vdc 3.5 Adc 'c PD T«g SO 285 -65 to +200 Watts m«/°C 6.5 In-lb °C SEATING PLANE-/ Max B 8JC 35 Unit °C/W (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF amplifiers. (21 For Repeated Assembly use 6 In. Lb. \H FLAT '-—JU-i » smt i PIN 1 EMITTER 2 BASE 3 EMITTER 4 COLLECTOR MILLII (Tin A 6 C 0 1 Symbol * 940 I"C rUsr 9 7 8 0.370 13 - 0.320 p 385 0.330 11.03 190 0.71J S.59 5.1 I2.00.070 1.79 «W 8.13 o.?4$ 0.010 T- 2.79 Ti2"iuo- Jt»L 1.130 Hr^orrT^ iW4 0.006 K 13.21 14.3" 0.^0 0.5S5 t 1.40 !.«• ILOS5 0.0(5 45» ON M 45° IDM P 1.2 H 7.59 7J _ 4 2 _ I 4.0 ~E « 0.171 T 2.1 2.4 M U U 3.3 .It . t-m 9-w I -Ufi1nar NOTE C A S E 1 4 W D I USE I32NC2A STUD CASE 146A 01 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished b> N.f Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \ Semi-Conductors entourages customers to verify that datasheets nre current before placing orders. MRF233 (continued) ELECTRICAL CHARACTERISTICS!^ - 25°C unless otherwise noted). Character inte Symbol I Typ | Max I Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1C- lOOmAdc, IB-O) Collector-Emitter Breakdown Voltage (1C- 50 mAdc. VB£ - 0) Emitter-Base Breakdown Voltage (IE -5.0 mAdc, l<;-0) Collector Cutoff Current (V CB - 15 Vdc. IE-O) BVCEO 18 - - Vdc BVcES 36 - - Vdc BVEBQ 4.0 - - Vdc ICBO — - 1.0 mAdc "FE 5.0 - - - cob - 100 120 pf= 10 - - dB 56 - - % ON CHARACTERISTICS DC Current Gain He • 1 0 Adc, V ce • 5.0 Vdcl DYNAMIC CHARACTERISTICS Output Capacitance (VCB • 12-s Vdc- 'E • o. f - 1 o MH*> FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain I VCC • 12.5 Vdc, Pout - 16 W, f - 90 MHzl Collector efficiency (VCC • 12.5 Vdc, Pou, • 15 W, f " 90 MHz) Load Mismatch (Vcc • 12-5 Vdc, Pout - 15 W. «-90MHr, Tc<J6°CI GPE T? VSWR > 30: 1 Through All Phate Angles in a 3 Second Interval After Which Devices Will Meet Gpg Test Limits FIGURE 1 • 90 MHz TEST CIRCUIT SCHEMATIC C1.C3 C2,C4 CG C6 C7 LI L2 9.0-180 pF, ARCO 463 26-280 pF ARCO 464 IOOODF UNEI.CO 0.01 llF ERIE DiK C.romlc 1.0 ^*F, 35 Vdc TANTALUM 2 Turns, »18 AWO. 3/8" I.D., 1/4" Lon» 0.22 MH, 9230-04 MILLER MolO.d Choke 3 2 HH, 9230 200 MILLER Molded Choke 2 Turns, ff^8 AWG. 3/8" I.D., 3/8" Long 10 Turns. #16 AWG, Wound On R2. R1 1 Ei Ohm, 1 /2 W, 10% Cvbon R3 68 Ohm, 1 W*tt, 10K Carbon nput/Output Connectors - Type BNC