., {Jnc,
<Se.ml-C.onJiu.ctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960
2N3055
NPN SILICON POWER TRANSISTOR
•MAXIMUM RATINGS
Symbol
Riling
.
Unit
V.lu,
^CollMtor-Emlimr Voltao»
VCEO
6O
Vde
Collactor-Emlttw Voltag*
VCER
VCB
VEB
'c
IB
fa
70
Vdc
IM
Vdc
115
W.Itl
0.657
W°C
TJ.T,,,
-65 to +200
°C
CoMBCtor-Baie Voltage
Emitter-Bate Votteg*
Collector CurrBnt - Contlnuoui
Beie Current — Contlnuoui
Tol»l Device Dissipation $ TC - 25°C
D«rat« abova 25°C
Operating and Storage Junction
Temperature Range
7.0
Vdc
15
Adc
7.0
•
Ade
THERMAL CHARACTERISTICS
Characteristic
Symbol
M.«
Unit
TO-3
•JC
1.52
°C/W
CollMtor Conmotid to Cm
Tharmsl Rnlttancft, Junction to Caw
JEDEC n>gl«t»r«d Data.
* ELECTRICAL CHARACTERISTICS 0"c " 25°C unless othofwisa noted)
Symbol
Mln
Colltctor-Emitt>r Sustaining Voltlgl (Note 1)
(l c - 200m Adc, IB -01
VCEO(sul)
60
-
Vdc
Collsctoi Emitter Bretkdown Voltag* INott 1)
(IC • 200 mAdc, RBE * tOO Ohmil
BVcER
70
~
Vdc
'CEO
—
0.7
mAdc
-
5.0
:io
~
5.0
20
5.0
70
-
1.1
~
8.0
CharKtnlltic
' Unit
OFF CHARACTERISTICS
CollKtor-Emilter Current
|V C E -30 Vdc. I B -0)
'
CollKtor Cutoff Current
(V C6 • 100 Vdc, VEBIo,f) - 1.5 Vdcl
(V tL - KK) Vdc, V LU(o , r | - 15 V.lc, Trj - I&0"C>
•
.
mAdc
ICEX
'EBO
Emiltar-BaM Cutoff Current
(V 6 B"'.OVdc, I C - 0 )
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 11
(IC • 4.0 Adc, VCE - 4.0 Vdcl
-
hFE
(lc - 10 Adc, VCE * 4 -0 Vdc)
Collector-Emitter Saturation Voltage (Note 11
(I C - 4.0 Adc, IQ -0.<t Adcl
(I C - 10 Adc, IB -3.3 Adcl
-
Vdc
VcE(iat)
_
VBE
Bew-Emitter Voltage (Note 11
(lc - 4.0 Adc. VCE " 4-0 vdc>
1.8
Vdc
15
120
-
10
~
kHz
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (Note 1)
(VCE - 4.0 Vdc, IC - l.o Adc, f - 1.0kHz)
Small Signal Current Gain Cutoff Frequency
( VCE ' 4-° vdc. lc " ' -0 Adc, f - 1 .0 kHil
Nola 1: PUI,, Wldihw3OO«.. Duly Cycl«S2.0X.
*lndlca»l JEOEC R*4liur«d Oatl.
,
h»t
<Cre
.
|