, One. eur 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 US A TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW42* - NPN, BDW46, BDW47* - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. 15 A DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 V, 85 W Features • High DC Current Gain - hFE = 2500 (typ) @ Ic = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(SUS) = 80 Vdc (mm) - BDW46 100 Vdc (min.) - BDW42/BDW47 MARKING DIAGRAM • Low Collector Emitter Saturation Voltage VcE(sat) = 2.0 Vdc (max) @ Ic = 5.0 Adc o 3.0 Vdc (max) r§ Ic = 10.0 Adc • Monolithic Construction with Built-in Base Emitter Shunt resistors TO-220AB • TO-220AB Compact Package BDWxx YYWW MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol BDW46 BDW42, BDW47 Collector-Base Voltage Emitter-Base Voltage Base Current Total Device Dissipation @ Tc = 25 C Derate above 25°C Operating and Storage Junction Temperature Range Unit Vdc 80 100 Vdc VCB BDW46 BDW42, BDW47 Collector Current Value VCEO 80 100 VEB Ic IB PD TJ. Tstg 5.0 Vdc 15 Adc 0.5 Adc 85 0.68 W W/°C -55 to +150 "C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol Max Unit R8JC 1.47 C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BDW42* - NPN, BDW46, BDW47* - PNP ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (lc = 30 mAdc, IB = 0) Symbol Min Max 80 100 - VCEO(SUS) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 1 00 Vdc, IE = 0) BDW46 BDW42/BDW47 'CEO ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, lc = 0) 'EBO : : " Unit Vdc mAdc 2.0 2.0 mAdc 1.0 1.0 2.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (lc = 5.0 Adc, VCE = 4.0 Vdc) (lc = 10 Adc, VCE = 4.0 Vdc) hFE Collector-Emitter Saturation Voltage (lc = 5.0Adc, IB = 10 mAdc) (lc = 10 Adc, IB = 50 mAdc) BDW46/BDW47 - - 2.0 3.0 - 3.0 Vdc VCE(sat) Base-Emitter On Voltage (lc = 10 Adc, VCE = 4.0 Vdc) SECOND BREAKDOWN (Note 2) Second Breakdown Collector Current with Base Forward Biased BDW42 250 1000 VBE(on) Adc Is/b 3.0 1.2 3.8 1.2 VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc Vdc - DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (lc = 3.0 Adc, VCE = 3.0 Vdc, f = 1 .0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Small-Signal Current Gain (lc = 3.0 Adc, VCE = 3.0 Vdc, f = 1 .0 kHz) 1. Pulse Test: Pulse Width = 300 jis, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. fT 4.0 ~ PF Cob - BDW42 BDW46/BDW47 hfe MHz 300 200 300 ™