, Line. <$emi-Conductoi VN1304 VN1306 VN1310 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV DSS / n •^DSfON) 'o(ON) BVDGS (max) (min) TO-39 TO-92 40V 8.00 0.5A — — 60V 8.00 0.5A VN1306N2 — 100V 8.00 0.5A — VN1310N3 Order Number / Package Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C|SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Package Options Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings S O D Drain-to-Source Voltage BV,DSS Drain-to-Gate Voltage BV,DOS Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* TO-39 Case: DRAIN TO-92 ±20V -55°Cto+150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. •"> - .«. ^ •• • ^••••ti* X >%*vfea-.^^ ««»« .•!• VN1304/VN1306/VN1310 Thermal Characteristics Package ID (continuous)* Power Dissipation ID (pulsed) 'DR* 3a ^ °c/w @ Tc = 25°C 'DRM °c/w TO-39 0.4A 1.4A 3.0W 41 125 0.4A 1.4A TO-92 0.25A 1.3A LOW 125 170 0.25A 1.3A ' ID (continuous) is limited by max rated Tj Electrical Characteristics (@ 25 C unless otherwise specified) Symbol Parameter Min VN1310 VN1306 100 VN1304 40 Drain-to-Source Breakdown Voltage BVDSS VoS(th) Gate Threshold Voltage AVGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current -3.9 0.25 0.6 0.50 1.4 Static Drain-to-Source ON-State Resistance RDS<ON) Unit Max Conditions V VGS = 0V, ID = 1 mA 2.4 V VGS = VDS, ID = 1mA -5.0 mV/°C 100 nA VGS = ±20V, VDS = 0V 1 MA VGS = 0V, VDS = Max Rating 100 uA VGS = 0V, VDS = 0.8 Max Rating T A =125°C 60 0.8 ON-State Drain Current 'D(ON) Typ VGs = VDS, ID = 1mA VGS = 5V, VDS = 25V A VGS = 10V, VDS = 25V 5.0 15 5.0 8.0 0.8 2 ARoS(ON) Change in RDSJON) with Temperature GFS Forward Transconductance GISS Input Capacitance 27 35 CQSS Common Source Output Capactance 13 15 CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 2 5 tr Rise Time 2 5 td(OFF) Turn-OFF Delay Time 2 6 tf Fall Time 2 5 VSD Diode Forward Voltage Drop 1.0 1.3 trr Reverse Recovery Time VGS = 5V, ID = 50mA fj VGS = 10V, ID = 500mA 120 %/°c VGS = 10V, ID = 500mA mU VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V f - 1 MHz VDD = 25V I - ^nnmA ns RGEN = 25H 350 V VGS = 0V. ISD = 0.5A ns VGS = 0V. ISD = 0.5A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V 10%, / / <C90% PULSE GENERATOR \) R gen '(ON) i 'd(ON) 1 'r *d(OFF) 'F Ho% OUTPUT 0V 90% ^ / / | AAAy I (n\ (Jl) I 10%-* <; ^ -90" 4 T _L 1 I- xINPUT •= , OUTPUT D.U.T.