, Line. £~>£,ini-L.onauci:oi L/-^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX98AP HIGH POWER NPN SILICON TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . HIGH FREQUENCY AND EFFICENCY CONVERTERS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial applications from single and three-phase mains operation. TO-218(SOT-93) INTERNAL SCHEMATIC DIAGRAM Co (TAB) ABSOLUTE MAXIMUM RATINGS Symbol VCER VCES VCEO VEBO Ic ICM IB IBM Plot Tstg Tj Parameter Collector-Emitter Voltage (RBE = < 10 Q) Collector-Base Voltage (V B E = 0) Collector-Emitter Voltage (!B = 0) Emitter-Base Voltage (Ic = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Power Dissipation at T ca se < 25 °C Storage Temperature Max Operating Junction Temperature Value 1000 1000 Unit V V 450 V 7 V 24 A 36 A 5 A 8 A 200 W -65 to 150 °C 150 °C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors THERMAL DATA Rthj-case Max Thermal Resistance Junction-case 0.63 D C/W ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Collector Cut-off Current (RBE = 10 Q) VCE = VCES VCE = VCES T C ASE = 125°C 1 8 uA mA Collector Cut-off Current (VBE = 0 ) VCE = VCES VCE = VCES T C ASE = 125°C 400 4 uA mA ICEO Collector Cut-off Current (IB = 0) VCE = VCEO 2 mA IEBO Emitter Cut-off Current (lc = 0) VEB = 5 V 2 mA VcEO(sus)* Collector-Emitter Sustaining Voltage lc = 200 mA VcER(sus)* Collector-Emitter Sustaining Voltage L = 2mH lc = 1 A VcE(sat)* Collector-Emitter Saturation Voltage lc=16A IB = 3. 2 A 1.2 V VBE(sat)* Base-Emitter Saturation Voltage lc = 16 A IB = 3.2 A 1.5 V ton Turn-on Time Vcc = 150 V lc = 20 A ts Storage Time IBI = - lB2 = 4 A ICER ICES tf Fall Time ton Turn-on Time Vcc = 150 V ts Storage Time IBI = - lB2 = 3.2 A tf Fall Time Pulsed: Pulse duration = 300 (is, duty cycle = 1.5 % lc = 16 A 450 V 1000 V 1 us 3 us 0.8 us 1 us 3 us 0.8 us TO-218 (SOT-93) MECHANICAL DATA inch mm DIM. MIN. TYP. MAX. MIN. A 4.7 4.9 0.185 C 1.17 1.37 0.046 D TYP. MAX. 0.193 0.054 0.098 2.5 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 - 16.2 - 0.637 4.15 0.155 L3 L5 0.708 18 3.95 L6 0.163 1.220 31 R - 12.2 - 0.480 0 4 4.1 0.157 0.161 .LL 1 2 3