1N4153 - New Jersey Semiconductor

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SPRINGFIELD, NEW JERSEY 07081
USA
1N4153
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * T.
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
75
V
IF(AV)
Average Rectified Forward Current
200
mA
'FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1 .0 second
Pulse Width = 1 .0 microsecond
1.0
4.0
A
A
TSTG
Storage Temperature Range
Tj
Operating Junction Temperature
-65 to +200
°C
175
°C
Value
Unit
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Parameter
Symbol
PD
Power Dissipation
500
mW
RBJA
Thermal Resistance, Junction to Ambient
300
°C/W
TC = 25-C unless otherwise noted
Symbol
Parameter
Conditions
VR
Breakdown Voltage
IR = 5uA
VF
Forward Voltage
IF = 0.1mA
IF = 0.25mA
IF = 1 .OmA
IP = 2.0mA
IF = 10mA
IF = 20mA
Win.
Max
75
0.49
0.53
0.59
0.62
0.70
0.74
Units
V
0.55
0.59
0.67
0.70
0.81
0.88
V
V
V
V
V
V
IR
Reverse Leakage
VR = 50V
VR = 50V, T A = 150°C
50
50
nA
jiA
CT
Total Capacitance
VR = 0, f= 1.0MHz
2
PF
tm
Reverse Recovery Time
IF = IR = 1 0mA, RL = 1 0OiJ, !„- = 1 .OmA
4
ns
IF = 1 OmA, VR = 6.0V
2
ns
trr2
RL = 100Q, !„.= 1.0mA
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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