*ij^9^^pr _ _ - New Jersey Semiconductor

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12A* I TcaM - 125°C
G 510, (H)
G 1010, (RI/FR55A
G2010, (RJ/FR56A
G3010, (R)
G4010, (RI/FR57A
G5010, (R)
G6010, (R1/FR58A
G8010, (R1/FR59
G 1110, (R1/FR61
12
G 1210, (R)
Tj = 150°C
50
100
200
300
400
500
600
800
1000
1200
ft = 260A2s
230
1,25
3
35
125
^_>
3^&1
12 A / Tease = 125°C Tj = 150°C l*t = 260 A* 8
BYW 88- 50, (Rl
BYW88- 100, (R)
BYW88- 200, (R)
BYW88- 300, (R)
BYW88- 400, (R)
BYW88- 500, (R)
BYW88- 600, (Rl
BYW88- 800, (R)
BYW 88-1000, (R)
BYW 88-1200, (R)
12
50
100
200
300
400
500
600
800
1000
1200
*ij^9
^^pr
10-32 UNF—
1,25
230
35
3
__
metal
(CB-33)
125
DO-4
(CB-33)
1072
6,35 max.
11,50
4,4
0 1 ,53 min
^\
M5
-32 UNF
1,11 over flats/
/
f
\S )-
n
-/
f
10,28 max.
M
^
0 10,76 max.
0 nv ' max
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