<y\ <£e.m.l-(,.onajULcko\ fi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. ne. TELEPHONE: (201) 376-2922 (212)227-6005 SILICON UNIJUNCTION TRANSISTOR F*X:(201)37M960 ,N5431 MAXIMUM RATINGS (TA = 25*C unless otherwise noted) Rating Symbol Value Unit p * 300 mW 50 mA 1. 5 A 30 V 35 V RMS Power Dissipation* D RMS Emitter Current e Pi'.ik-J'ul.sc Emitter Current •• i ** e L'mitter Reverse Voltaic 1 V B2E Inlerbase Voltage * V B2B10 Operating Junction Temperature Run^c T.I ' T . Storape Temperature Ran^e SIR -65 to +125 "C -65 to +200 "C •Derate 3.0 rnW/°C increase in ambient temperature. "Duty Cycle< l.ffn, PRR = 10 PPS upon power dissipation at T = 25"C. ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted) Fig. No. * Characteristic Intrinsic Standoff Ratio Symbol n® <VB2B1"10V> V Interbase Resistance (VB2Bl-3-°V-lE*0} Interbase Resistance Temperature Coefficient ( V B 2 B l = 3 ' O V ' I E ' ' 0 ' T A = 0t0l00'C) Emitter Saturation Voltage <VB2B.-10V'IB'lMlnA) . °RBB • V EBJ(saO® Moduluted Intcrbaic Current (VB2B1 * I0 V - 'E ' 5° mA) Emitter Reverie Current 'D2(mixl) 'ED20 «VD2B-MV'IDl-°> Peak-Point Emitter Current (V U2B , = 25 V) >P <vn2n1"l-ov> Valley-Point Current (V |J2U , = 2 0 V , H|J2 = 100 ohms) Uase-One Peak Pulse Voltage (VBD -4.0 volts) Quality Semi-Conductors V® 3 VOB1 Min Max 0.72 0.80 6.0 8.S 0.4 0.8 - 3.0 $.0 30 - 10 : 0.4 4.0 2.0 - 1.0 . . Unit kfl %/"C V mA nA HA mA V