cSemi-Conaucioi ^Pioaucti, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 MJE1090 .hn, MJE1093 PNP <SIUCON> MJE2090ri,n,MJE2093 MJE1100>hroMJE1103NPN MJE2100*,uMJE2103 5.0 AMPERE PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 70 WATTS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain hpE = 750 (Mini @ IQ * 3.0 and 4 0 Adc • True Three Lead Monolithic Construction - Emitter-Base Resistors to Prevent Leakage Multiplication are Built in. • Available in Two Packages — Case 90 or Case 199 MJE1090 MJE1091 MJE1092 MJE1093 MJE1100 MJE1101 MJE1102 MJE11O3 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Bate Voltage Emitter-Bate Voltage Collector Current Beie Current Total Device Dunpation 9 TC • 25°C Derate above 2S°C MJE10M MJE1091 MJE1100 MJE1101 MJE2OBO MJE2091 MJE2100 MJE2101 VCEO 60 VCB VEB 'c IB 60 TJ. T,,, Vdc 80 Vdc Unit CASE 90-05 50 Vdc 50 Adc 0,1 Adc 70 056 Watt! W/°C -55 t o * 150 °C >0 Operating end Storage Junction Temperatmg Range MJE1092 MJE10B3 MJE11O2 MJE11O3 MJE20S2 MJE2OB3 MJE2102 MJE2103 BO | THERMAL CHARACTERISTICS CharMUriltic Thermal Rniitince. Junction to C»M Symbol Mai Unit »JC 1.8 °c/w MJE20SO MJE20S1 MJE20SJ MJ62093 MJE2100. MUE2101 MJE2102 MJEJ103 S S S X \ - CASE 199-04 Kg S N S Pp. POWER DISSIPATION WATTS) S FIGURE 1 - POWER DERATING N> XN = usA 20 «l> 60 80 100 120 N 140 IN TC. CA5f TEMPERATURE (°C) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ Semi-Conductors encourages customers to verity that datasheets nre current before placing orders. Quality Semi-Conductors MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090thru MJE2093 PNP/MJE2100 thru MJE2103 NPN ELECTRICAL CHARACTERISTICS ITC ' 35°C unim oth«w» noted) ChtracwMIe Off CHARACTERISTICS Colkctor-Erninv Brwkdown Volu«t«l (lc- 100 mAdc, IB -01 MJE1090, MJE1091, MJE1100. MJE1101 MJE2090, MJE2091, MJE 2100. MJE2101 MJE1092, MJE1093, MJ61102. MJE1103 MJE2092, MJE2093, MJE2102, MJE2103 ColtKtOr Cutoff Current IV Ce -30V<fc. IB ' 0) MJE 1090, MJE1091.MJE 1100, MJE1101 MJE2090, MJE2091, MJE2100, MJB2101 (VCE -40 Vdc, iB - ov I Symbol Min Mix 60 60 80 60 - - 5OO 500 500 500 Unit Vdc BVCE0 : uAdc 'CEO MJE 1093, MJE 1093. MJE 1102, WUEIIOS MJE 2092, MJE2093. MJ62102. MJE2103 Coll*cwr Cutoff Currant (VCB - R*Ud BVCEQ. >E ' 0' <V£p - Rlttd BVnEO, l£ " 0, TC - IOO°C) Emitt«r Cutoff Currant (V8E - 6.0 Vdc, IC - 01 ] - ICBO rnAdc >6BO - 0.2 2.0 — 2.0 750 '50 750 750 - mAdc ON CHARACTERISTICS HI DC Current Giin (1C - 3.0 Adc. VCE "3.0 Vdc) hFE MJE 1090, MJE 1O92, MJE 1100. MJE 1102 MJE 2090, MJE2092, MJE2100. MJE2102 MJE1091. MJE 1093, MJE1101, MJE 1103 MJE2091. MJE S093, MJE210V MJE 2 103 (1C - 4.0 Adc, VCE - 3.0 Vdc) CollKtor-Emitttr Saturation Voltag* IIC -3.0 Adc, IB - 12 mAdc) |_ MJE 1090. MJE 1092, MJE 1100, MJE 1102 MJE2090, MJE 2092. MJE2100, MJE2102 MJE 1091, MJE 1093, MJE 1101, MJE 1103 VUE2091. MJP2093. MJE2101. MJEJJffi) ^ (1C- 4.0 Adc, I B " 16 mAdc) BiM-Emitur On Valtagt ((c • 3.0 Adc, VCE -S.OVdcl MJE 1090, MJE 1092, MJE 1)00, MJE 1102 MJE2090. MJE2092. MJE2100. MJE2102 MJE1091. MJEI093. MJE 1 101, MJE 1 103 MJE2091, MJE2093. MJE2101, MJE2103 dC - 4.0 Adc. VCE ' 3.0 Vdc) DYNAMIC CHARACTERISTICS Snull-Signd Currtnt Gain dC - 3.0 Adc. VCE - 3.0 Vdc, f - 1 .0 MHz) I Vdc VCEI»I) - 2.5 ._ _2,5 2.8 2.8 Vdc v BE(on) hf. - _ 2.5 2.5 2.B 2.5 1.0 - - <"puli« T.,i Pull. Width < 300 ia. Duty Cycl* < 20% FIGURE 2 - DC SAFE OPERATING AREA '• 1 _1'.^_ ::i==: T V x- »c«idiur> tak dOM Hnitfd bMflta ly L miw O U T t • K"( andirv Wir Li niud - - MJE ion.: ' l = -- -- T C'2S« C a i.a 3.0 so it MJEMOO.!)! I" MJE2IOO.OI '" V\ r^~ i—•• =A_ MJE1W.93 1 MJE2092.J3 (~ «£= •UCnm.ra i <a 20 There are two limitations on ih? power handling ability o* a transistor: junction temperature and secondary breakdown Safe operating area curves indicate IQ VCE lirYll'!> °' the transistor that must be observed for reliable operation, e g , the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. (See AN-415) 30 \ so ; 100 E. COUECTOW EMITTER VOLTAGE [VOLTS! FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC ._K thru MJE10I3 MJC2MQ thru MJC2QB3 n«^ ( . 1 . % 10 k r , r S' * 150 I 1 t MJE1100 thru MJE1103 MJ£2100 saw 0-4 | MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090 thru MJE2093 PNP/MJE2100 thru MJE2103 NPN MJE 1090 MJE 1091 MJE 1O92 MJE 1093 MJE 1100 MJC 1101 MJE 1 1O2 MJE 1 103 --a-*- ,F M U r* \ 0 ^ t "I — B— M T (1 D 4 3 STYLE 2: PIN 1. EMITTER !. COLLECTOR 3. BASE MILLIN ETERS DIM MIN A 16.13 1257 J.I8 1.09 351 •? 2.67 0.913 15 11 H j K M MAX INCHES MIN MAX 0.635 0.495 0.645 0.505 124 0.043 0.049 3.76 0.138 0.148 0.18 BSC 0.105 0.115 1638 12.83 3.43 BSC 2.92 0864 1638 O.OJ5 0.595 9° 'R~ "V.«Tl u """ — S —it— r R QLT~ ^^^-f STYLE 1 PIM BASE 2 COLLECTOR 3 EMITTER b.« 0.034 O.M5 9" 2.16 0.075 0085 t.« a.in o.ns «OTE 1 LEADS WITHIN 005" RAO QF TR UE POSITION (TPIATMMC CASE 90-05 —J L ^ r, jt K _i —•HGH1^ C D F T - t IH II ^ t A ~%&)!F K, i iV MJE2090 MJE 2091 MJE 2092 MJE2093 MJE 2 100 MJE21O1 MJE21D2 MJE21O3 DIM MILLIMETERS MIN MAX 0.633 0.643 0.495 0.50S 0125 0 135 0.51 0.76 0.020 0.030 3.61 3.86 0.142 0.152 2.54 bst B U 10 BSC H 2.67 2.92 0.10S 0.115 0.43 0.89 0.017 0.027 J 0.580 0.590 K 14.73 14.93 L 2.41 216 0.085 0.096 M 3« w 3° TYP QQM Q06B t 4? 1 73 ^-§~ 5.03 4.78 0.1 R 2.16 1.91 0.11 75 * 0.085 6.034 s 0.81 U.Oti T S.99 7.24 0.275 0.285 6.22 0.245 d.»5 U 6.48 1. QIM "G" IS TO CENTER LINE OF LEADS. A B f D f 16.08 12.57 3 18 INCHES MlN MAX 1633 12.83 343 o.oaj CASE 199-04