, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5911/5912 PRODUCT SUMMARY Part Number Vos(off) (V) V(BR)GSS Win (V) gfs Win (mS) IG TVp(pA) |VGsi-VGS2lMax(mV) 2N5911 ~1to~5 -25 5 10 2N5912 -1 to -5 -25 5 -1 -1 15 FEATURES BENEFITS APPLICATIONS • • • • • • • Minimum Parasitics Ensuring Maximum High-Frequency Performance • Improved Op Amp Speed, Settling Time Accuracy • Minimum Input Error/Trimming Requirement • Insignificant Signal Loss/Error Voltage • High System Sensitivity • Minimum Error with Large Input Signal • Wideband Differential Amps • High-Speed, Temp-Compensated, Single-Ended Input Amps • High Speed Comparators • Impedance Converters Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB DESCRIPTION The 2N5911/5912 are matched pairs of JFETs mounted in a TO-78 package. This two-chip design reduces parasitics and gives better performance at high frequencies while ensuring extremely tight matching. TO-78 Si D2 Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage Gate-Gate Voltage Gate Current Lead Temperature (V16" from case for 10 sec.) Storage Temperature Operating Junction Temperature - -25 V i 80 V 50 mA 300'C . -65 to 200° C -5Sto150"C Power Dissipation : Per Side 3 . Totalb . 367 mW 500 mW Notes a. Derate 3 mW/'C above 25 C b. Derate 4 mW/<• C above 25" C NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors 2 N 5911/5912 SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Limits 2N5911 Parameter Symbol Test Conditions Typa Min Max 2N5912 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current V(BR)GSS IG = -1 nA, VDS = o v -35 -25 VGS(ofT) V D s= 10V, I D =1 nA -3,5 -1 'DSS VDS= i°v, VGS- o v VGS = -15 v, VDS = O v 15 7 40 mA -1 -100 -100 PA -2 -250 -250 nA -1 -100 -100 PA -100 nA loss TA = 150"C VDO= 10V, ID =5 mA Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltage0 IG TA = 125"C -0,3 VGS VDG = 10 V, IQ = 5 mA -1.5 vGs(F) IG = 1 mA, VDS = 0 V 0.7 -25 -5 -1 40 7 -100 -0,3 -4 -0.3 v -5 -4 V Dynamic Common-Source Forward Transconductance 9fs Common-Source Output Conductance 9os Common- Source Forward Transconductance 9ts Common-Source Output Conductance 9os Common-Source Input Capacitance Qss Common-Source Reverse Transfer Capacitance crss Equivalent Input Noise Voltage in Noise Figure NF 6 V D G =10V, I D = 5 m A f = 1 kHz 70 5.8 V D G =10V, I D = 5mA f = 100 MHz 5 10 5 100 5 10 5 10 mS 100 US 10 mS us 90 150 150 3 5 5 1 12 1.2 4 20 20 nV/ VHz 0.1 1 1 dB VDG = 10V, ID = 5mA 4 10 15 mV VDQ^ 10V, ID = 5mA T A =-55to125°C 15 20 40 (,V,C V DG = 10V, I D = 5mA f = 1 MHz V D G =10V, I D = 5mA f= 10kHz R0 = 100kQ PF Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio |VGS1-VGS2l A|V GS1 -V OS2 | AT 'DSSI Transconductance Ratio fe Differential Gate Current Common Mode Rejection Ratioc 0.98 0.95 1 095 1 0,98 095 1 0,95 1 'DSS2 IferW CMRR VDS= 10 V, ID = 5mA f = 1 kHz VQC = 1 0 V, ID = 5 mA, TA = 1 25 C VDG = 5 to 10 V, ID = 5 mA Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b Pulse test: PW < 300 |ts duty cycle « 3% c This parameter not registered with JEDEC. 0005 85 20 20 nA dB