2N2221A.22A - New Jersey Semiconductor

iodu.cti, Dnc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N2221A
2N2222A
NPN SILICON PLANAR SWITCHING TRANSISTORS
TO-18
Switching And Linear Application DC And VHP Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2221A.22A
UNIT
VCEO
40
Collector -Emitter Voltage
VCBO
75
Collector -Base Voltage
Emitter -Base Voltage
VEBO
6.0
Collector Current Continuous
1C
800
PD
500
Power Dissipation @Ta=25 degC
2.28
Derate Above 25deg C
PD
@ Tc=25 degC
1.2
Derate Above 25deg C
6.85
-65 to +200
Operating And Storage Junction
Tj, Tstg
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Ta=150degC
VCB=60V, IE=0
ICEX
VCE=60V, VEB=3V
IEBO
VEB=3V. IC=0
IBL
VCE=60V, VEB=3V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base Emitter Saturation Voltage
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
V
V
V
mA
mW
mW/deg C
W
mW/deg C
degC
VALUE
MIN
40
75
6.0
MAX
UNIT
10
V
V
V
nA
10
10
10
20
0.3
1.0
0.6-1.2
2.0
uA
nA
nA
nA
V
V
V
V
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
SYMBOL TEST CONDITION
DESCRIPTION
IC=0.1mA,VCE=10V
hFE
DC Current Gain
IC=1mA,VCE=10V
IC=10mA,VCE=10V
2N2221A to 2N2222A
2221A
2222A
>20
>35
>25
>50
>75
>35
Ta=55 deg C
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=150mA,VCE=1V
IC=500mA,VCE=10V
>15
40-120
>20
>25
UNIT
>35
100-300
>50
>40
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe
Input Impedance
hie
Voltage Feedback Ratio
hre
Out put Admittance
hoe
Collector Base Time Constant
rb'Cc
Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure
Re(hie)
NF
DYNAMIC CHARACTERISTICS
Transistors Frequency
ft
Out-Put Capacitance
Cob
Input Capacitance
Gib
SWITCHING Time
Delay time
Rise time
td
tr
Storage time
Fall time
ts
tf
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%
ALLf=1kHz
IC=1mA, VCE=10V
IC=10mA(VCE=10V
IC=1mA, VCE=10V
IC=10mA,VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA,VCE=10V
IE=20mA, VCB=20V
f=31.8MHz
IC=20mA, VCE=20V
f=300MHz
IC=100uA,VCE=10V
Rs=1kohms,f=1kHz
30-150 50-300
50-300 75-375
1.0-3.5 2.0-8.0
0.2-1.0 0.25-1.25
<5.0
<8.0
<2.5
<4.0
3.0-15
5.0-35
10-100 25-200
<150
<150
kohms
X10-4
umhos
ps
<60
<60
ohms
-
<4.0
dB
>250
>300
MHz
<8.0
<8.0
PF
<25
<25
PF
IC=150mA,IB1=15mA
VCC=30V,VBE=0.5V -
<10
<25
ns
ns
IC=150mA, IB1 =
IB2=15mA,VCC=30V -
<225
<60
ns
ns
IC=20mA, VCE=20V
f=100MHz
VCB=10V, IE=0
f=100kHz
VEB=0.5V, IC=0
f=100kHz
TO-18 Metal Can Package
o
.2
DIM
A
B
C
D
E
F
G
H
J
K
L
MIN
MAX
5.24
5.84
4,52
4.97
4.31
5.33
0.40
0.53
—
—
0.76
—
1.27
-
2.97
0.91
1.17
0.71
1.21
12.70
—
45DEG
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
Packing Detail
PACKAGE
TO-18
STANDARD PACK
Net Weight/Qty
Details
|| 1K/polybag
350gm/1Kpcs
||
INNER CARTON BOX
II Size
Qtv
||
II Size
|| 3" x 7.5" x 7.5"
|| 17" x1 5" x 13.5"
5.0K
OUTER CARTON BOX
Qty
GrWt
80.0K
34 kgs
j