tSzmi-Conduckoi ZPioaudi, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212) 227-6005 2 N 2904/2 N 2905 FAX: (973) 376-8960 2N2906/2N2907 USA GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications. INTERNAL SCHEMATIC DIAGRAM TO-18 TO-39 mp ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit VCBO Collector-base Voltage (IE = 0) -60 V VCEO Collector-emitter Voltage (IB = 0) -40 V VEBO Emitter-base Voltage (Ic = 0) -5 V -600 mA 0.6 0.4 W W 3 1.8 W W Ic Ptot Collector Current Total Power Dissipation at T am b < 25 "C for2N2904 and 2N2905 for2N2906 and 2N2907 at Toase ^ 25 °C for2N2904 and 2N2905 for2N2906 and 2N2907 Tstg, Tj Storage and Junction Temperature - 65 to 200 cc NJ Seini-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before plncing orders. THERMAL DATA Rth j-case Rth j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2N2904 2N2905 2N2906 2N2907 58.3 °C/W 292 °CA/V 97.3 °C/W 437.5 DC/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit -20 -20 nA HA Collector Cutoff Current OE=O) VCB = - 50 V VCB=-50V ICEX Collector Cutoff Current (VBE = 0.5 V) VCE = - 30 V -50 IBEX Base Cutoff Current (VBE = 0.5 V) Colllector-base Breakdown Voltage (IE = 0) VCE = - 30 V -50 ICBO V(BR) CBO Tamb=150=C lc = - 1 0 uA -60 nA nA V V V(BR)CEO* Collector-emitter Breakdown Voltage (IB = 0) lc =- 10 mA -40 V(BR) EBO Emittter-base Breakdown Voltage (lc = 0) IE =-10 MA -5 VCE (sat)* Collector-emitter Saturation Voltage l c = - 150mA IB =- 15mA I c = - 500 mA I B = - 50 mA -0.4 -1.6 V V VBE (sat)* Base-emitter Saturation Voltage l c = - 150mA | c = - 500mA -1.3 -2.6 V V DC Current Gain for2N2904 and 2N2906 lc =-0.1 mA VCE = - 10 V lc = - 1 mA VCE = - 10 V lc=-10mA VCE = - 10V l c = - 150mA VCE = - 10V l c = - 500mA VCE = - 10V 20 25 35 40 20 for 2 N 290 5 and2N2907 l c = - 0.1mA VCE =- 10V lc = - 1 mA VCE =- 10 V lc=-10mA VCE = - 10V l c = - 150mA VCE = - 10V l c = - 500mA VCE = - 10V 35 50 75 100 30 hFE* hFE* fj DC Current Gain Transition Frequency CEBO Emitter-base Capacitance CCBO Collector-base Capacitance IB =- 16mA IB =- 50mA 120 300 MHz lc=-50mA f= 100 MHz v i^MHz VEB=-2V 30 PF 1E/1°MHZ VCB =- 1 0 V 8 PF = _2QV V 200 CE !:;-"-5S !:;.--1ssj v -=- 3 ° v td Delay Time tr Rise Time ts Storage Time l c = - 150mA V CC = - 6 V I B1 = _ |B2 = _ 15 mA 80 tf Fall Time l c = - 150mA Vcc = - 6 V IBI = - IB2 = - 15 mA 30 Pulsed : pulse duration = 300 (is, duty cyde = 1 %. 10 40 ns ns ns ns TO-18 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. MAX. 0.500 12.7 A TYP. B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 0.100 2.54 H 1.2 0.047 I 1.16 0.045 L 45° 45° m