, U na.
J.
CX
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MU4891 (SILICON)
thru
MU4894
SILICON ANNULAR PLASTIC UNIJUNCTION TRANSISTORS
PN UNIJUNCTION
TRANSISTORS
. . . designed for military and industrial use in pulse, timing,
triggering, sensing, and oscillator circuits. The annular process
provides low leakage current, fast switching and low peak-point
currents as well as outstanding reliability and uniformity.
Recommended usage includes:
•
•
•
•
Long-time Delay Circuits • MU4894
Silicon Controlled Rectifier Triggering Circuits - MU4893
High-frequency Relaxation-Oscillator Circuits - MU4892
General-Purpose Unijunction Applications - MU4891
/
rAi
MAXIMUM RATINGS (T* = 25 -C unless otherwise noted)
Rating
Symbol
Value
Unit
RMS Power Dissipation*
PQ
300
mW
RMS Emitter Current
I(
50
mA
Peak Pulse Emitter Current**
1£
1. 0**
Amp
VB2E
30
Volts
T .
-65 to +150
°C
Emitter Reverse Voltage
Storage Temperature Range
,i •
N
SEATING^?
PLANE
j_
II
K
JrP-
a H-
STYLE 9:
PIN 1. BASE 1
2 EMITTER
3 BASE 2
"jyr^
n
\S
B
J.b »
* Derate 3. 0 mW/"C increase in Ambient temperature, Total power dissipation
(available power to Emitter and Base-Two) must be 11mited by external circultry. Interbase voltage <VMBJ) limited by power diiislpation,
VB»! -i*zr*D
" Capacitance discharge current must fall to 0. 37 Amp rithin
»
3. 0 ms and PRR
s 10 PPS.
DIM
MIN
A
4.4EO
B 3.180
C
4.320
D
0.407
F
0.407
K
1Z.700
L 1.150
N
P
6.350
d
3.430
R 2.410
S
2.030
MAX
5.200
4.190
5.330
0.533
0.482
1.390
1.270
2,670
2.670
TO-92
1* •
sf*
*
^*
1
•
INCHES
MIN
MAX
0.175
0.205
0.125 0.1E5
0.170 0.210
0.016
0.021
0.016
0.011
0-500
0.045
0.055
0.050
0.250
0.135
0.095 0.105
0.080 0.105
MU4891 thru MU4894
ELECTRICAL CHARACTERISTICS (T* = 2S'C unless otherwise noted)
Characteristic
Intrinsic Standoff Ratio
(V n , n . - 10 V) Note 1
MU4892
MU4891, M04893
MU4894
Oia
Interbase Resistance
( V MBI - 3.0 V, I_ - 0)
aio
*•
MU4891, MU4892
MU4893, MU4894
Interbase Resistance Temperature Coefficient
(VB2B1 - 3.0 V, I E = 0, T A = -65°C to + 100°C)
Symbol
i
F BB
«'»
Emitter Saturation Voltage
(V B2B1 = 10 V, IE • 50 mA) Note 2
V EBl(sat)
Modulated Interbase Current
'B2{mod)
(V B2B1 = 10 Vl J E = 50 mA)
Emitter Reverse Current
'EB2O
<VBIE-MV'IB131)>
Peak Point Emitter Current
(V,,,-.. - 25 V)
MU4891
MU4892, MU4893
MU4894
BZB1
Valley Point Current
< v n»m = 20 v - R n»
= 10°
°hms) Note 2
00
Min
Typ
Max
0.51
0.55
0.74
-
0.69
0.82
0.86
4.0
4.0
7.0
7.0
9.1
12.0
0.1
-
0.9
-
2.5
4.0
10
15
-
-
5.0
10
nA
-
0.6
0.6
0.6
5.0
2.0
1.0
"
Unit
'
k ohms
,%/*c
Volts
mA
1P
mA
!v
MU4891, MU4893, MU4894
MU4892
Base-One Peak Pulse Voltage
(Note 3, Figure 3)
2.0
2.0
4.0
3,0
-
3.0
6.0
5.0
8.0
-
Volts
V OBl
MU4891, MU4892. MU4894
MU4893
NOTES
2 Use pulse techniques: PW • 300 jii duty cycle *2% to avoid
internal heating due to interbase modulation which may result in
erroneous readings.
1. Intrinsic standoff ratio,
'Us defined by equation;
'' = 'vn,',""
3, Base-One Peak Pulse Voltage is measured in circuit of Figure 3
This specification is used to ensure minimum pulse amplitude for
applications in SCR firing circuits and other types Of pulse circuits
Where Vp = Peak Point Emitter Voltage
V,,,, = Interbase Voltage
^Ell) ^ Emitter to Base-One Junction Diode Drop
(—0.5 V <B 10 >iA)
FIGURE I - UNIJUNCTION TRANSISTOR
SYMBOl MID NOMENCLATURE
FIGURE 2 -STATIC EMITTER
CHARACTERISTICS CURVES
to Sho» Details)
CUTOFF
REGION'
FIGURE 3-Vo,, TEST CIRCUIT
rTypicai Relaxation Oscillator)