BD675 - New Jersey Semiconductor

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lls vie
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium-power silicon NPN Darlington
transistors can be used as output devices in complementary
general-purpose amplifier applications.
Features
• High DC Current Gain:
hFE = 750 (Min) @ Ic
= 1.5 and 2.0 Adc
• Monolithic Construction
• BD675. 675A, 677, 677A. 679, 679A, 681 are complementary
with BD676, 676A, 678. 678A, 680, 680A, 682
• BD677. 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2
BASE
3
EMITTER 1
MAXIMUM RATINGS
Symbol
Value
Unit
BD675, A
BD677, A
BD679, A
BD681
VCEO
45
60
80
100
Vdc
BD675, A
BD677, A
BD679, A
BD681
VCBO
45
60
80
100
Vdc
VEBO
5.0
Vdc
Collector Current
Ic
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25' C
Derate above 25 C
PD
40
0.32
W
W/ : C
Tj. Tstg
-55 to + 150
"C
Symbol
Max
Unit
3.13
<C/W
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
TO-225AA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
9jc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. Nl
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
|
Characteristic
Symbol
Min
Max
Unit
BVcEO
45
60
80
100
-
Vdc
-
500
-
0.2
2.0
—
2.0
750
750
-
-
2.5
2.8
-
2.5
2.5
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage, (Note 1)
(lc = 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD6S1
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
!CEO
Collector Cutoff Current
(VCB = Rated BVcEO, IE = 0)
(VCB = Rated BVCEo, IE = °, Tc = 100'C)
ICBO
Emitter Cutoff Current (V6£ = 5.0 Vdc, lc = 0)
IEBO
„
-
jiAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Currert Gain, (Note 1 )
(lc = 1 .5 Adc.VcE = 3.0 Vdc)
(lc = 2.0 Adc, VCE = 3.0 Vdc)
"
HFE
BD675, 677, 679, 681
BD675A, 677 A, 679A
Collector-Emitter Saturation Voltage, (Note 1)
(lc = 1 .5 Adc, IB = 30 mAdc)
(lc = 2.0 Adc, IB = 40 mAdc)
BD677, 679, 681
BD675A, 677 A, 679A
Base-Emitter On Voltage, (Note 1)
(lc = 1 .5 Adc, VCE = 3.0 Vdc)
(lc = 2.0 Adc, VCE = 3 0 Vdc)
VcE(sat)
Vdc
VBE(on)
BD677, 679, 681
BD675A, 677A, 679A
DYNAMIC CHARACTERISTICS
[ Small Signal Current Gain (lc = 1 5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
1.0
1. Pulse Test: Pulse Width < 300 |iS, Duty Cycle s 2.0%.
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
PACKAGE DIMENSIONS
TO-225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE. NEW STANDARD
077-09.
*'
J
INCHES
DIM
MIN
MAX
A
0.425
0.435
B JL295_J 0.305
C
0.095
0.105
D
0.020
0.026
F
0.115
0.130
G
0.094 BSC
H
0.050
0.095
0.015
0.025
J
K
0.575
0.655
M
5°
Q
0.148
0.158
R
0.045
0.065
S
0.025
0.035
U
0.145
0,155
—
V
0.040
rvp
S|$[0.25(0.010)® | A ® | [email protected]
- D 2 PL
| ^| 0.25 (0.010)® | A ® | B ® |
Vdc
STYLE 1:
PIN1. EMITTER
2. COLLECTOR
3. BASE
MILOMETERS
MIN
10.80
MAX
11.04
7.50
7.74
2.42
2.66
0.51
2.93
2.39
1.27
0.66
3.30
BSC
2.41
0.39
0.63
14.61
5°
16.63
3.76
rvp
4.01
1.15
1.65
O.E4
0.88
3.69
3.93
1.02
...