'/£Ti£iy <z~>£.m.i-(-onaiicto'i lJ 10 ducts., Line. U tx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP4N08, MTP5N05 MTP4N10, MTP5N06 I)t'sii;iH'i-'> Data Sheet 4.0 and 5.0 AMPERE N-CHANNEL ENHANCEMENT MODE SILICON GATE N-CHANNEL TMOS POWER FET TMOS POWER FIELD EFFECT TRANSISTOR rOS(on) 3 0-« OHM 80 and 100 VOLTS These TMOS Power RETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. SO ind 60 VOLTS • Silicon Gate for Fast Switching .Speeds — Switching Times Specified at 100°C • Designer's Data — IQSS. vOS(on). VQs(th) and SOA Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source-to-Orain Dioda Characterized for Use With Inductive Loads TMOS MTP4NO* MTMN10 M1F5NOS MIP5N06 os MAXIMUM RATINGS 1 Rating Symbol MTP 5N05 SNOB 4N08 4N10 Unit VOSS 50 60 80 100 Vdc Drain-Gate Voltage |HGS - 1.0 MO) VOGH SO 60 80 100 Vdc Gate-Soure* VoHage VGS Drain Currant Continuous Pulsed ID 'DM Gale Current — Pulsed 'CM . Drain-Source Voltage Total Power Dissipation @ T(; = 2S°C Derate above 25°C Operating and Storage Temparaturn Rango ±20 50 10 V* Adc 40 90 15 PO Adc Warn Tj.Tstg 50 04 W/°C -65 to 1 50 °C •uuifnn m THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Maximum Lead Tamp, for Soldering Purposes. 1/8* from case for 5 seconds «9JC 2.5 TL 275 °C/W °C 1M "Wont Cuv" Condition* The Designer's Data Sheet permits the design of most circuits entirely from the i nformation presented. Limit data — representing device characteristics boundaries—are given to facilitate "worst casa" design. Quality Semi-Conductors a la TO-220A8 ELECTRICAL CHARACTERISTICS (Tc = ;5"C unless otherwise noted) | Symbol Chametaristie Min Mix 50 60 80 100 — Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS = 0. In = 5.0 mAJ Vdc V(BR)DSS MTP5N05 MTP5N06 MTP4NOB MTP4N10 'DSS Zero Gate Voltage Drain Currant (VDs = 0.85 Rated VfjsS- VGS = °) mAdc. 0.25 25 ' — (Tj=100°C) Gate-Body Leakage Current (VGS = 20 Vde, VDs a 0) <GSS — 500 2.0 1.5 4.5 4.0 - 0.6 08 nAdc ON CHARACTERISTICS* Gate Threshold Voltage (ID = 1 -OmA. VDS = VGS) (Tj=100'C) Vdc vGS(th) Static Drain-Source On-Resistance I VGS = 1 0 Vdc. ID = 2.5 Adc) (VGS = 10vdc. ID " 2.0 Adc) Ohms rDS(on) MTP5N05. MTP5N06 MTP4N08/MTP4N10 Dram-Source On-Voltage (Vgg = 10 V) (lD = 5.0Adc) <ln = 2.5 Adc. Tj= 100°C) (ID - 4.0 Ade) dD= 2.0 Adc.Tj = IDOOC) Forward Transconductance (VDS = 1 5 V. IQ = 2.5 A) (VDS = 15 V. I0 =2.0 A) i i Vdc vDS(on) 375 3.0 4.8 3.2 MTP5N05/MTP5N06 MTP4N08. MTP4N10 mhoS 91s 075 075 — Ciss — 300 pF CDSS — 250 pF Crss — eo pF «d(on) — - 20 80 30 30 ns MTP5N05/MTP5N06 MTP4N08/MTP4N10 DYNAMIC CHARACTERISTICS Input Capacitance (V0s * 25 v. VQS • o. f » i .0 MH*> Output Capacitance (vDs = 25 v, VGS = o, f = i .0 MHI) Reverse Transfer Capacitance (VDs = 25 V. VGS = 0. « = 1 .0 MH*) r SWITCHING CHARACTERISTICS* (Tj= 100'C) j Turn-On Delay Time | Rise Time | Turn -Off Delay Tim* ! Fall Time (VDs " 25 V. ID - 0.5 Rated ID. «r ngen = 50 ohms. See Figures 1 and 2) 'dloffl tf SOURCE DRAIN DIODE CHARACTERISTICS' Characteristic Forward On-Voltage Forward Turn-On Time Symbol Typ Unit (15= Rated ID- VSD 2.5 Vdc VGS = 0. 'on 150 ns 'rr 250 ns Reverse Recovery Time •Pulse r»it PulH Width -S3OO »i. Duty Cyckl <2%. FIGURE 1 - SWITCHING TEST CIRCUIT FIGURE 2 - SWITCHING WAVEFORMS VDD OUT Output. Vou, Inverted Input. Vm ;