2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0745-0200 (Previous ADE-208-690) Rev.2.00 Aug.10.2005 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “YA-”. *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 7 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 8 1.5 20 80 150 –55 to +150 Unit V V V mA mW °C °C 2SC5543 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol ICBO ICEO IEBO hFE Cob Min — — — 85 — Typ — — — — 0.51 Max 10 1 10 170 0.9 Unit µA mA µA Gain bandwidth product Power gain fT PG 5.5 11 8.5 13.7 — — GHz dB Noise figure NF — 1.1 2.5 dB Rev.2.00 Aug 10, 2005 page 2 of 7 pF Test Conditions VCB = 15V , IE = 0 VCE = 8V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz VCE = 1V, IC = 5mA f = 900MHz 2SC5543 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio hFE 160 120 80 40 VCE = 1 V 100 0 0 50 100 150 200 1 2 5 10 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current IE = 0 f = 1MHz 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 5 100 10 VCE = 1 V 8 6 4 2 0 10 1 Collector to Base Voltage VCB (V) 2 5 10 20 50 100 Collector Current IC (mA) Noise Figure vs. Collector Current Power Gain vs. Collector Current 20 5 VCE = 1 V VCE = 1 V Noise Figure NF (dB) f = 900MHz 16 Power Gain PG (dB) 50 Collector Current IC (mA) 1.0 12 8 4 0 1 20 Ambient Temperature Ta (°C) Gain Bandwidth Product fT (GHz) Collector Output Capacitance Cob (pF) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve f = 900MHz 4 3 2 1 0 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 7 100 1 2 5 10 20 50 Collector Current IC (mA) 100 2SC5543 S21 Parameter vs. Collector Current S21 parameter |S21|2 (dB) 20 VCE = 1 V 16 f = 1GHz 12 8 4 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 7 100 2SC5543 S21 Paraameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 4 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.04 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° –2 –.6 –.8 –1 –1.5 Condition : V CE = 1 V , I C = 5mA Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 2SC5543 Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω) S11 S21 S12 S22 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.836 0.757 0.649 0.564 0.496 0.436 0.396 0.364 0.338 0.316 0.305 0.296 0.293 0.286 0.287 0.285 ANG –20.7 –41.1 –58.5 –73.2 –85.2 –97.1 –106.2 –114.9 –123.9 –130.6 –140.0 –146.5 –153.0 –159.5 –166.0 –170.7 MAG 13.66 12.22 10.57 9.14 7.90 6.91 6.12 5.49 4.96 4.52 4.16 3.86 3.59 3.36 3.17 3.00 ANG 162.9 146.9 134.1 124.5 116.8 111.2 105.9 102.0 98.3 95.3 92.3 89.8 87.5 85.4 83.2 81.4 MAG 0.0249 0.0472 0.0637 0.0750 0.0840 0.0916 0.0985 0.105 0.111 0.118 0.124 0.130 0.137 0.143 0.150 0.157 ANG 77.4 68.0 60.8 56.9 54.2 53.4 53.0 53.2 53.6 54.1 54.7 55.3 56.1 56.6 57.2 57.7 MAG 0.948 0.846 0.727 0.623 0.538 0.469 0.413 0.368 0.327 0.297 0.270 0.246 0.229 0.209 0.195 0.180 ANG –14.2 –26.9 –36.2 –42.5 –46.2 –48.8 –50.4 –51.1 –51.1 –51.2 –50.7 –49.7 –48.7 –47.9 –46.3 –45.0 1700 1800 1900 2000 0.289 0.294 0.302 0.308 –175.8 178.7 175.4 171.1 2.83 2.71 2.59 2.47 79.8 77.9 75.9 74.5 0.164 0.171 0.178 0.185 58.2 58.8 59.0 59.2 0.167 0.154 0.144 0.133 –43.8 –42.4 –40.2 –38.6 Rev.2.00 Aug 10, 2005 page 6 of 7 2SC5543 Package Dimensions JEITA Package Code RENESAS Code SC-89 Modified Package Name PUSF0003ZA-A D MASS[Typ.] MFPAK / MFPAKV 0.0016g A e c LP E HE L A A b x M S e A Reference Symbol A2 A e1 A1 b b1 S I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Dimension in Millimeters Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.75 0.5 Ordering Information Part Name 2SC5543YA-TR-E Quantity 9000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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