RF Power Transistors 2N4932 2N4933

ZPiodueti., One.
TELEPHONE: (973) 376-2922
(212) 227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FAX: (973) 376-8960
RF Power Transistors
2N4932
2N4933
JEDEC TO-oO
For International VHP Mobil* and Portable Communication,
66 to 88 MHz
Operation From a Power Supply of 13.5 volti (2N4932)
24 volts (2N4933)
Power Output (Min.) at 88 MHz
12 watts (2K4932)
20 watts (2N4933)
Load Protection
High Voltage Ratings
RATINGS
Maximum Ratings, Absolute-Maximum Values:
2M4932 2H4933
COLLECTOR-TO-BASE
VOLTAGE
50
70 '
V CBO
COLLECTOR-TO-EMITTER
VOLTAGE;
With base open
25
35 V
With V BE = -1.5V.
50
70 V
V CEV
EMITTER-TO-BASE VOLTAGE V EBO
4.0
V
COLLECTOR CURRENT:
Peak
10
A
Continuous . , . . , .
Ip
A
3.3
RK INPUT POWER
Pin
W
At 88 MHz
3.5
Below 88 MHz
See Fig.7
TRANSISTOR DISSIPATION . . PT
At case temperatures up to 25" C
70
W
At case temperatures above 35° C . . . . .
See Fig.l
TEMPERATURE RANGE:
Storage & Operating (Junction) . . . .
-65 to 200 °C
LEAD TEMPERATURE (During soldering);
At distances ^ 1/32 in. from
insulating wafer for 10 s max
230
°C
DISSIPATION DERATING CURVE
Fia.l
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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ELECTRICAL CHARACTERISTICS FOR 2N4932
Case T*/nperafure = 25° C
TEST CONDITIONS
DC
Characteristic
Symbol
Collector
Volts
VCB
Collector-Cutoff Current
Collector-to- Emitter
Breakdown Voltage
Emitter-to-Base
Breakdown Voltage
VBE
IE
IB
0
RF Power Output
(See f'ig.2}
P
r out
1.0
mA
10
mA
50
V
200°
25
V
4
V
0
0
1.5
Maa.
200"
10
BVEBO
cob
Min.
0
-1.5
V CEO ( SU8 )
Collector-to-Base
Capacitance
"c
0
40
Units
Limits
Current
(Milliamperei)
15
'CEO
'CBO
V CEV (sus)
VCE
DC
DC
Base
Volts
120
12=
pF
W
ELECTRICAL CHARACTERISTICS FOR 2M4933
Case Temperature = 25° C
TEST CONDITIONS
Characteristic
Symbol
DC
Collector
Volts
VCB
Collector-Cutoff Current
Collector-to- Emitter
Breakdown Voltage
Emitter-to-Base
Breakdown Voltage
VBE
DC
Current
(William pens)
IE
-1.5
VCEO(aus)
0
10
BVEBO
Cob
RK Power Output
(See fig.3l
p
rout
'c
Mm.
0
50
V^gyfaus)
CoIlector-to-Base
Capacitance
IB
Limits
0
30
'CEO
'CBO
VCE
DC
Bas*
Volts
.10
"Pulsed through an inductor (25raH). duty factor = 50%
h For P in = 3.5 W, at 88 MHz; Vcc = 24V, minimum efficiency = 70%
c For P ln = 3.5 W, at 88 MHz; Vc<, = 13.5V, minimum efficiency = 70%
Units
Max.
1.0
mA
10
mA
200°
70
V
son"
35
V
0
4
V
0
85
20b
pK
w