'l.E.'iis.u tSztnL-Conduetoi ^Product*., Dnc. (-/ tJ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFM12N08, RFM12N10, RFP12N08, RFP12N10 12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features • 12A, 80V and 100V ' rDS(ON) = 0-200ii • Related Literature Symbol D o Ordering Information PART NUMBER PACKAGE BRAND RFM12N08 TO-204AA RFM12N08 RFM12N10 TO-204AA RFM12N10 RFP12N08 TO-220AB RFP12N08 RFP12N10 TO-220AB RFP12N10 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA JEDEC TO-220AB DRAIN (FLANGE) DRAIN (TAB) GATE (PIN 1) SOURCE (PIN 2) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified RFM12N08 RFM12N10 RFP12N08 RFP12N10 Drain to Source Voltage (Note 1) VDSS 80 100 80 100 V Drain to Gate Voltage (RGs = 20kQ) (Note 1) VDGR 80 100 80 100 V Irj IDM 12 30 12 30 12 30 12 30 A A VQS ±20 ±20 ±20 ±20 V Pp 75 0.6 75 0.6 60 0.48 60 0.48 W W/°C -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C 300 260 300 260 300 260 300 260 °C °C Continuous Drain Current Pulsed Drain Current (Note 3) Gate to Source Voltage Maximum Power Dissipation Linear Derating Factor Operating and Storage Temperature Tj TSJQ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 TL Tpkg UNITS CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Tj = 25°Cto 125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFM12N08, RFP12N08 80 - - V RFM12N10, EFP12N10 100 - - V 2 - 4 V HA Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time BVDSS VGS(TH) Fall Time Input Capacitance VGS = VDS. ID = 250(iA (Figure 8) VDS = Rated BVDSs, VGs = OV - - VDS = 0.8 x Rated BVDSSi Tc = 125°C - - 25 ^A VGS = ±2ov, VDS = ov - - ±100 nA ID = 12A, VGS = 10V (Figures 6, 7) - - 0.200 n ID = 12A,VGS = 10V - - 2.4 V VDD = sov, iD = 6A, RG = son, vGs = iov, RL = sn, - 45 70 ns - 250 375 ns 'd(OFF) - 85 130 ns tf - 100 150 ns - - 850 PF - - 300 PF - - 150 PF °C/W °C/W !DSS 'GSS rDS(ON) VDS(ON) td(ON) CISS Output Capacitance CQSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case ID = 250nA, VGS = ov 1 tr Turn-Off Delay Time TEST CONDITIONS Rejc (Figures 10, 11, 12) VDS = 25V, VGS = OV, f = 1 MHz (Figure 9) RFM12N08, RFM12N10 - - 1.67 RFP12N08, RFP12N10 - - 2.083 Source to Drain Diode Specifications PARAMETER Source to Drain Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dlSD/dt = 100A/J1S - 150 - ns TEST CONDITIONS