Qs.iis.i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 1N746 THRU 1N759 AND 1N4370 THRU 1N4372 SOOmW SILICON ZENER DIODES VOLTAGE RANGE 2.4 to 12.0 Volts FEATURES * Zener voltage 2. 4V to 12. 0V * Metallurgical^ bonded device types MECHANICAL CHARACTERISTICS * CASE: Hermetically sealed glass case. DO - 35. * FINISH; All external surfaces are corrosion resistant and leads solderable. * THERMAL RESISTANCE:200t/W(Typical)junction to lead at 0.375 inches from body. Metallurgical^ bonded DO - 35, exhibit less than lOOtVW at zero distance from body. * POLARITY: banded end is cathode. *WEIGHT:0.2grams * MOUNTING POSITIONS i Any 1 MAXIMUM RATINGS Junction and Storage temperatures: -65t:to+ 175t DC Power Dissipation :500mW Power Derating: 4. OmW/tabove 50"C Forward Voltage 0 200mA: 1.5 Volts Alldimendonslnfttflr1 ELECTRICAL CHARCTERISTICS JEDEC TYPE NO. (Notel) NCMNAL 2ENER VOLTAGE VzOfer (Not* 2) VOLTS TEST CURRENT tr mA MAXMUM ZENER IMPEDANCE ZZT«|ZT (NM»3) OHMS MAXMOM REVERSE CURRENT «VR = 1VOLT 025t 0 T+ 13TC V IMJ^X* (•A MAXMUM ZENER CURRENT IZM (Not) 4) TYPICAL TEMP CCfFF.Cf VOLTAGE Qvz mA %rc 150 13E 120 -O.OS6 ^ 1N4370 11*371 1N4372 2.4 2.7 3-0 20 20 20 30 30 29 100 75 50 200 ISO 100 -oceo -0.075 NOTE 1 Standard tolerance on JEDEC types shown is± 10% . Suffix letter A denotes ± 5% toler±2%;and suffix letter D denotes ± 1 % tolerance . NOTE Voltage measurements to be performed 20 sec. after application of D.C.test current. NOTE 3 1N749 1N747 1N748 3.3 3.6 3.9 20 20 20 28 24 23 1N749 1N750 1N752 4.3 4.7 S.I 5.6 20 20 20 20 22 19 17 11 1N753 1N754 1N755 1N756 6.2 6.8 7.5 82 20 20 20 20 7 6 8 8 1N757 9.1 1W68 10.0 12.0 20 20 20 10 17 30 1N761 1N759 10 10 30 30 30 110 100 96 -O.OB6 -0.06S -0046 X X 20 20 86 75 70 66 -0.033 -0.016 1 1 1 20 20 20 20 60 56 50 46 + 0.049 + 0.063 + 0.057 +0.060 1 1 1 20 20 20 40 35 30 +0.061 + 0.062 + 0.082 10 2 2 1 1 1 1 0.010 + 0.030 Zener impedance derived by superimposing on IZT. a 60 cps.rms ac current equal to 10% lzr(2mA ac) . NOTE 4 Allowance has been made for the increase in Vz due to Zz and for the increase in junction temperature as the unit approaches thermal equilibrium at the power dissipation of 400 rnW. * JEDEC Registered Data Quality Semi-Conductors