, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MAC218 MAC218A Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • • • • Blocking Voltage to 800 Volts Glass Passivated Junctions for Greater Parameter Uniformity and Stability TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes (MAC218A Series) TRIACs 8 AMPERES RMS 200 thru 800 VOLTS MT2 O ' MT1 (TO-220AB) MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State VoltageO) (Gate Open, Tj = 25 to 125°C) Symbol MAC218-4, MAC218A4 MAC218-6, MAC218A6 MAC218-8, MAC218A8 MAC218-10, MAC218A10 On-State Current RMS (Conduction Angle = 360°, TC = +80°C) VDRM Value Unit Volts 200 400 600 800 'T(RMS) 8 Amps 'TSM 100 Amps |2t 40 A2S PGM 16 Watts Average Gate Power (Tc = +80°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Trigger Current (Pulse Width = 1 us) IGTM 4 Amps TJ ^10 to +125 °C Tstg -40to+150 °c Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Fusing Current (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 2 us) Operating Junction Temperature Range Storage Temperature Range 1. VQRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Quality Semi-Conductors MAC218 Series MAC218A Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RBJC 2.2 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM. gate open) Symbol VTM Gate Trigger Current (Continuous dc) (VD = 12Vdc, R|_ = 12Q) Trigger Mode MT2(+), Gate(+); MT2(+), Gate(-); MT2(-), Gate(-) MT2(-), Gate(+) "A" SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kQ, Tj = +125°C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY VGT Critical Rate of Rise of Off-State Voltage (Vrj = Rated VDRM. Exponential Voltage Rise, Gate Open, Tj = 125°C) FIGURE 1 — CURRENT DERATING 1.0 Unit — — 10 2 MA mA — 1.7 2 Volts 50 75 — Volts 0.9 0.9 1.1 1.4 2 2 2 2.5 IH ~ ~ 50 mA dv/dt(c) ~ 5 " V/ns dv/dt " 100 " V/us FIGURE 2 — POWER DISSIPATION . «• 10| 1 1 1 1 1 1 1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 l-r(RMS).RMSONSTATE CURRENT (AMPS) mA 0.2 0.2 Critical Rate of Rise of Commutating Off-State Voltage (VD = Rated VDRM, ITM = 11 .3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) . Max — Holding Current (Either Direction) (VD = 24 Vdc, Gate Open, Initiating Current = 200 mA) , Typ !DRM Tj = 25°C Tj = 125°C Peak On-State Voltage (Either Direction) (IjM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle < 2%) , Min <£- 1 1 1 1 1 1 1.0 2.0 3.0 4.0 5.0 Ql^—J 0 1 1 1 1 6.0 IT(RMS)RMSONSTATE CURRENT (AMPS) 7.0 8.0