TELEPHONE: ^73)376-2922 i 113)227-6000 FAX:i 973)3794060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N3932 2N3933 RF TRANSISTORS •2N3932 and 2N3933 are epitaxial planar transistors of the silicon npn type, with characteristics which make them extremely useful as general-purpose rf amplifiers at frequencies up to 450 MHz. These characteristics include low noise figures at 60, 200, and 460 MHz low feedback capacitance, high gain-bandwidth product, and high power gains in unneutralized amplifier circuits. The 2N3932 and 2N3933 utilize a compact, hermetically sealed four-lead metal package, in which the active elements of the transistor are insulated from the case. The construction of these devices contributes to highly reliable performance at very- and ultra-highfrequencies, and permits grounding of the case to minimize feedback capacitances and undesired coupling -a feature not available in devices using conventional epoxy-type enclosures. 2N3932 2N3933 30 40 max. 20 30 max. 2.5 2,5 max. V Colleotor-to-Emitter Voltage, CEO Collector Current, IQ Transistor Diaaipation, Pj: at ambient / up to 25° C . . . temperatures ( above 25° C Temperature Range: Storage and Operating (Junction) Lead Temperature (During Soldering)) At distances not less than 1/16" from seat* ing surface for 10 seconds FEATURES • low nelt* figurtf (NF): 2N3932 2.5 dB typ. 4.5 dB max. 5 dB typ. 2N3933 3 dB max. 4 dB max. 5 dB typ. 6 60 MHz 0 200 MHz § 450 MHz • high gain-bandwidth product (f j): 750 MHz min. for both typ»» • high wnnoutralizod powor gain (G-9)$ 2N3932 = ll.SdB min. at 200 MHi 2N3933 = 14 dB min. at 200 MHz • low output capacitanco (Ccj,): Cet = 0.55 pF max. for both typos Emitter-to-Baae Voltage, EBO For VHF and IMF Applications in Industrial and Military Equipment • low colltctor-to-ba*« time constant (r|,'Cc): 2N3932 = 8 pi max. 2N3933 = 6 ps max. Maximum Rating*, Abioluti-Maximum Valuti: Collector-to-Baee Voltage, VggQ SILICON NPN EPITAXIAL PLANAR TYPES • • hormotically soalod motal 4>load pockago limited by dissipation 200 200 max. mW See Pig. 1 -65 to 200« C 265 265 max. °C •HOO - M O 90 100 100 AM0CNT TEMPERATURE <T A )—*C 200 VI .Semi-Conductors reserves the right tn change test conditions, parameter limits ;md package dimensions without notice Information furnished by NI Scmi-C'onducton n believed to he both ucctirate and reliable .11 th« lime of going to press. However M Semi -C c mdutlors .bonnes no responsibility tor iiny errors or omissions discovered in its use NJ Seini-C undtittors aistimcrs to wrir'v lh,u datasheets .ire current before placing orders A R176 .i»S RlfCa .195 - D R176D .220 • \ • A • Rifric rjR .SOS .334 R176d .324 1 R170e .31$ .335 R17«r .194 R176g .192 B .210 C .500 MIN .346 .500 HIM f l76 .500 .210 MIN .l&O .500 .2"60 MIN .259 .748 MAX .240 .500 .260 MDf .208 .539 .208 .118 MAX R176h ,33i .2*0 .74T MAX MAX MIN R176J .334 .259 .925 MAX MAX MIN .210 .500 R176k MIN D E P 0 .230 .036 .036 .100 .04T .0*8 .230 .036^ .036 .100 .OlT .036 .028 .100 ,046 .048 .335 .028 .029 .200 .370 .034 .045 BSC .370 .031 .029 .200 MAX t2i& .028 .029 .370 .034 .043 .228 .098 rw6* .229 .370 .031 MAX .369 .031 MAX .230 H .016 .019 J .4)30 JLli .030 .019 .016 .019 -016 .021 .017 .030 MAX -OOj .125 .027 .016 .021 .018 MAX .106 .019 MAX .031 .200 .016 .039 MIN .031 .200 .016 .039