tSemi-Conducto'i A, tfne. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STEFN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3649 -> 2N3653 FAST SWITCHING THYRISTORS • GLASS PASSIVATED CHIP . HIGH STABILITY AND RELIABILITY • HIGH di/dt AND dv/dt RATINGS Thread: 1/4'-28 UNF: type N' Me on request: type N' + suffix M • tq^ 15(08 TO 48 (Metal) DESCRIPTION SCR designed for high frequency power switching applications. ABSOLUTE RATINGS (limiting values) Symbol If(RMS) Ir(AV) ITSM I2t di/dt Tstg Parameter RMS on-state Current (1) Mean on-state Current (1) Non Repetitive Surge Peak on-state Current (Tj initial sM 20 °C) (2) Tc - 40 °C Tc = 40 °C t - 8.3 ms t-10 ms t = lOms Parameter Repetitive Peak off-state Voltage (4) VDRM VHRM (1) Single phase circuit, 180° conduction angle. (2) Half sins wave. (3) la = 1 A db/dt = 1 A/(is. Unit 35 A 22.5 A 210 A 200 lat Value for Fusing Critical Rate of Rise of on-state Current (3) Storage and Operating Junction Temperature Range 200 A2s 400 A/us °C °C -65to 150 -6510 120 T, Symbol Value 2N 36.. 49 50 51 52 53 SO 100 200 300 400 Unit V THERMAL RESISTANCES Symbol RIB (|-c) Rth (c-h) Parameter Junction-case for D.C. Contact (case to heatsink) Value Unit 1.45 0.40 °c/w °c/w <fc«i|tWc^^ s«mM. unJiKto« » bdtawl to to hold ununrit «Ml rdfciW..«Ih* lim. »( guin* w prtss. However s I GATE CHARACTERISTICS (maximum values) PGM = 60 W (tp = 500 us) IFGM = 10 A (tp = 500 us) PQ(AV) = 1 W VFQM = 15 V (tp = 500 ^s) VRQM = 5 V ELECTRICAL CHARACTERISTICS IQT VQT VGD IH IL VTM IDRM IRRM Mln. Test Conditions Symbol Typ. Max. T, = 25 "C VD = 12V Pulse Duration > 20 us T|= 25 °C VD =12 V Pulse Duration > 20 us RL=33Q 180 Unit mA RU=33O 1.5 V Tj = 120"C TJ = 25 °C T, = 25°C Pulse Duration > 20 us T]- 25 °C V D »VDRM IT = 500 mA VD=12V R L =3.3kn Gate Open IQ = 360mA ITM=25A tp -10ms T, = 120°C VDRM Specified T|-120«C VRRM Specified T,. 25 °C V D =VBRM •el !G = 500 mA dlG/dt = 5 A/us T|-120°C IT =25 A »Q VD = 67 % VDRM di/dt = 5 A/us dv/dt - 200 V/us Gate Open dv/dt* TJ = 1 20 °C Gate Open Linear Slope up to VD - 67 % VDRM • For higher guaranteed values, please consult us. Cooling method : by conduction (method C) Marking: type number Weight :13.5±1g Polarity: anode to case Stud totqua : 3.5 mAN mln - 3.8 mAN max. V mA 140 mA 2.05 V 6 mA r e VR = 15V 0.1 ±0,2 mA us 15 200 TO 48 Metal W-3BUNF 70 1 IT = 25 A PACKAGE MECHANICAL DATA 02*0.2 0.2 Us V/us