20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX; (973) 376-8960 BSX45; BSX46; BSX47 NPN medium power transistors PINNING FEATURES • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter base APPLICATIONS 2 3 collector, connected to case • General industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA PARAMETER SYMBOL VCBO collector-base voltage CONDITIONS MAX. UNIT open emitter _ - 80 V BSX46 - - 100 V - - 120 V BSX45 - - 40 V BSX46 BSX47 - - 60 V - - 80 V collector-emitter voltage open base ICM peak collector current Plot total power dissipation Tcase < 25 °C hFE DC current gain lc = 1 00 mA; VCE = 1 V fi TYP. BSX45 BSX47 VCEO MIN. - - 1.5 A - - 6.25 W BSX45-10; BSX46-10; BSX47-10 63 100 160 BSX45-16; BSX46-16; BSX47-16 100 160 250 - - transition frequency lc = 50 mA; VCE = 10 V; f = 100 MHz 50 MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors NPN medium power transistors BSX45; BSX46; BSX47 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). PARAMETER SYMBOL VCBO collector-base voltage BSX46 BSX47 collector-emitter voltage MAX. UNIT open emitter BSX45 VCEO MIN. CONDITIONS - 80 100 120 V V V - 40 60 80 7 1 V V V V A 1.5 200 6.25 +150 200 +150 A mA W °C °C open base BSX45 BSX46 BSX47 open collector - VEBO emitter-base voltage Ic ICM IBM collector current (DC) Plot total power dissipation Tstg storage temperature Tj junction temperature -65 - Tamb operating ambient temperature -65 peak collector current peak base current Tcase < 25 °C °c THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient in free air R-th j-c thermal resistance from junction to case VALUE UNIT 200 28 K/W K/W NPN medium power transistors BSX45; BSX46; BSX47 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER BSX45; BSX46 ICBQ CONDITIONS IE = 0; VCB = 60 V lE = 0;V CB = 60V;T a m b =150°C - - _ nA - 10 nA BSX45-10; BSX46-10; BSX47-10 15 40 - BSX45-16; BSX46-16 25 90 BSX45-10; BSX46-10; BSX47-10 63 100 160 BSX45-16; BSX46-16; BSX47-16 100 160 250 BSX45-10; BSX46-10; BSX47-10 25 40 - BSX45-16;BSX46-16 35 60 - 20 hpE DC current gain DC current gain DC current gain lc = 100mA; VCE = 1V lc = 500 mA; VCE = 1 V lc = 1 A; VCE = 1 V BSX45-10; BSX46-10; BSX47-10 BSX45-16;BSX46-16 collector-emitter saturation voltage VcEsat collector-emitter saturation voltage VBE base-emitter voltage l c = 1 A; I B = 100mA _ 1 900 mV l c = 100mA; VCE = 1 V lc = 500 mA; VCE = 1 V - - 1 V 0.75 - 1.5 V lc = 1 A; VCE = 1 V lE = ie = 0;V CB = 1 0 V ; f = 1 MHz - - 2 V 25 PF 20 PF 15 pF - 80 PF - - MHz 3.5 - dB - - 200 - - 850 ns ns BSX45 BSX46 - - BSX47 emitter capacitance transition frequency noise figure V lc = 500 mA; IB = 25 mA BSX47 collector capacitance - 30 BSX45; BSX46 ce MA MA lc = 0; VEB = 5 V fr F nA 10 10 lc = 100uA;VCE = 1 V Cc 30 30 DC current gain VcEsat _ - emitter cut-off current hpE UNIT _ IE = 0; VCB = 80 V lE = 0;V CB = 80V;T a m b =150° IEBO hpE TYP. MAX. collector cut-off current BSX47 hpE MIN. collector cut-off current lc = 50 mA; VCE = 10 V; f = 100 MHz 50 lc = 100 nA; VCE = 5 V; Rs = 1 kii; f = 1 kHz; B = 200 Hz lc = ic = 0;V EB = 0 . 5 V ; f = 1 MHz Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time lcon = 100 mA; lBon = 5 mA; Isoff = -5 mA NPN medium power transistors BSX45; BSX46; BSX47 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 - seating plane H b 10 mm I scale DIMENSIONS (mm are the original dimensions) UNIT A a b D Di nnm 6.60 6.35 5.08 0.48 0.41 9.39 9.08 8.33 8.18 OUTLINE VERSION SOT5/1 1 j L w a 14.2 12.7 0.2 45° k 0.85 0.95 0.75 0.75 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION e30 ISSUE DATE