<£e,mL- Conductor ^Product*., (Inc. TELEPHONE: (201) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.S.A. 2N3644 • 2N3645 • PN3644 • PN3645 FAX:<201>3788960 PNP SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS AND SWITCHES ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature Operating Junction Temperature Lead Temperature (10 seconds) Maximum Power Dissipation (Notes 2 & 3) Total Dissipation at 25°C Case Temperature at 25°C Ambient Temperature Maximum Voltages and Current Collector to Base Voltage Collector to Emitter Voltage (Note 4) Emitter to Base Voltage VEBO Collector Current 2N3644/45 -55°C to+125°C 125°C 260°C PN3644/45 -55CC to+150°C 150°C 260°C 0,07 W 0.3W 2N/PN3645 0.625 W 2N/PN3644 -60V -60V -5.0V -45V -45 V -5.0V 500mA 500mA LOW ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC "FE DC Current Gain hFE DC Pulse Current Gain hfe Cob Cib v CE(sat) High Frequency Current. Gain Output Capacitance Input Capacitance Pulsed Collector Saturation Voltage v CEO(sus) v SE(sat) Collector to Emitter Sustaining Voltage ' Pulsed Base BVEBO BVcBO ton Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Turn On Time 'off Turn Off Time 2N3644 PN3644 MIN. MAX. 40 80 100 80 100 20 2.0 2N3645 PN3645 MIN. MAX. 40 80 100 80 100 20 2.0 240 300 8.0 35 -0.25 -0.4 -1.0 -0.8 -5.0 -1.0 -1.3 -2,0 IG = 10mA, VCE = -10 v 240 300 IC • 50mA, VCE * 1.0 V IC = 150mA, VCE * -10V 1C = 300 mA, VCE " -2.0 V 1C " 20 mA, VCE " -20 V, f - 100 MHz 8.0 35 -0.25 -0.4 -1.0 pF PF V V V V -1.0 -1.3 -2.0 -5.0 40 40 V V V V V ns 100 100 ns -0,8 -60 -45 TEST CONDITIONS lc = 100 tiA, V CE = -10V I C = 1.0mA, VCE " ~ 1 OV -60 -45 UNITS IE = °, VCB = -IOV, f = 140 kHz l c - 0 , VEB = -0.5V, f - 140kHz Ic " 50 mA, Ig - 2.5 mA IC" 150 mA, IB = 15mA 1C" 300mA, IB = 30rnA IC " 10 mA (pulsed), IB " 0 1C " 50mA, IB = 2.5 mA 1C = 150mA, IB = 15mA 1C = 300 mA, IB - 30 mA IC-Q, iE = io M A ic- 100 MA, IE - o 1C * 300mA, IBI » 30mA, v c c • -30 v 'CES Collector Reverse Current 35 35 2.0 . 2.0 nA nA MA *A 1C * 300mA, Ig-) « 132 » 30mA, VCE VCE VCE VCE = -30 v • -30 v, vBE * o » -50 v, VBE • o • -3°v. VBE • °> T A " 65°c VCE • -so v, v8E • o, T A - 65°c TO-105 PN3644 PN3645 2N3644 2N3645 SCATMG KLMIC Quality Semi-Conductors