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TELEPHONE: (973) 376-2922
(212) 227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FAX: (973) 376-8960
2N2573 thru 2N2579 (SILICON)
ro-3
For units with plnj (TO-3 Modified) specify devices MCR649AP-K2N2573) thru MCR649AP-7(2N2579).
MAXIMUM RATINGS (T, = I2J'C unless oihtfwiw noted)
Rating
Symbol
peak Reverse Blocking Voltage*
2N2573
2N2S74
2N2575
2N2576
2N2S77
2N2S7*
2N2S79
Forward Current RMS (»11 conduction angles)
VKSM(rep)*
'T(KMS)
Value
Unit
Volts
25
30
100
200
300
400
$00
25
Amp
Circuit Fusing Consideration*
(Tj * -65° to *12a°C, t S 8.3 ma)
lzt
Ptak Surgt Currant
(On* Cycle, 90 Hi, Tj « -65 to + 125°C)
ITSM
Peak Gate Power - Forward
PGM
5.0
Watts
P G(AV)
0.5
Watt
2.0
Amp
.£
VoiU
Average Gate Power - Forward
Peak Gate Current - Forward
Peak Gate Voltage - Forward
Reverse
Opt rating Junction Temperature Range
Storage Temperature Range
Az«
275
>UM
VGFM
V GHM
Tj
T««
Amp
260
s.o
-65 to -1-125
°c
-65 to *150
°c
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N I
Semi-Conductors encourages customers to verify that datasheets are current More placing orders.
ELECTRICAL CHARACTERISTICS (TC-ZSl»Cunleaotherwtaenot.d|
SjmbU
ChMKtwMfc
Peak Forward Blocking Voltage*
(Tj • 125°C)
2N2573
2N2574
2N2379
2N2576
2N2S77
2N2S78
2N2ST9
VDRM'
Feik Forward Blocking Current
(Rated V DRM with gate open, Tj = 125°C)
'DRM
Peak Reverse Blocking Current
(Hated V R S M ,Tj. 125°C)
'RRM
Mh
29
SO
100
200
300
400
500
T|*
—
Untts
volt*
Mil
1
_
mA
0.6
5.0
0.6
S.O
20
40
1.0
3.9
mA
—
Gate Trigger Current (Continuous dc)
(Anode Voltage * 7 Vdc, R L - 100 0)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage « 7 Vdc, RL • 100 ft)
(VDRM • R«**^RL "100n- T j " I2S°C)
_
^
VGT
VGNT
Forward On Voltage
<I T - 20 Adc)
VT
Holding Current
(Anode Voltage - 7 Vdc. Gate Open)
IH
Turn-On Time (tj + y
UGT* 50 «A. IT • IDA)
'««
Turn-OK Time
(IT - 10 A, IR - 10 A, dv/dt =• 20 Y//II, Tj = 125°C)
'q
mA
0.3
3.S
Volts
1.1
dv/dt
Thermal Resistance (Juncttqo to Case)
«JC
mA
20
—
—
0S
.0
—,
MS
30
—
Forward Voltage Application Rate
(Gate Open, Tj - 12S°C)
1.4
—
—
(V D RM- rated voltage)
Volt*
—.
V/MS
,y
30
—
.0
—
* V DRM 'or a11 tTPM CUI "• aPpU*d on * continuous dc basis wltbont Incurring damage.
VORM ratings apply for zero or negative gate voltage.
—
1.S
°c/w