, One, TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.S.A. 2N6040 »hru2N6042 PNP (SILICON) DARLINGTON 8 AMPERE 2N6043.hru 2x6045 NPN MJE6040 ,hru MJE6042 PNP MJE6043 ^ MJE 6045 NPN PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain hpE = 2500 (Typ) @ IG = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc < i > v CEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 = 80 Vdc (Min) - 2N6041, 2N6044 = 100 Vdc (Min) - 2N6042,2N6045 • Low Collector Emitter Saturation Voltage — il VcE(sat) = 2.0Vdc(Max) @ 1C = 4.0 Adc - 2N6040,41.2N6043.44 = 2.0 Vdc (Max) @> \ = 3.0 Adc - 2N6042, 2N6045 COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 100 VOLTS 75 WATTS 2N6040 thru 2N6045 PIN 1 B A S E 2. C O L L E C T O R 3. EMITTER • Monolithic Construction with Built-in Base Emitter Shunt Resistors CASE 199 04 • Thermopad High Efficiency Compact Package (1) Applies to corresponding in house part numbers also. MJE6040 thru MJE6045 •MAXIMUM RATINGS Riling Syrntml Collector-Emitter Volume Collector-BcM Voltage ErnitterBw Volttge CollKtor Current Continuout _VCEOJ 60 VCB VEB 1^ 60 P«k >B Tot* Device Oiuip.non te» Q 1HS042 2N604S MJ66M. MJE604E Unit 100 Vdc ao ao • B« Current — 100 Vdc — so- Vdc 80 — 16 — Adc 120—— mAdc o O*r«te tbove 2b C Tottf D«vic«Oiuip.lionl9iTA 2N8O40 2NGO41 2N6043 2 H6044 MJE6040 M E6O41 MJE6043 MJE6044 25°C PD Dvr.tt above 2S°C uoer.ting .nd storage junction. Ttmpcr.ture Rtnge Tj,T,,, _ ?2 00175 — -65 to » 150 Wills «/°C — °C TO127 THERMAL CHARACTERISTICS ChVKl«.M Thvfmjjl Rmttieinct. Junction to Amh ent PIN 1 EMITTER 2. COLLECTOR 3. BASE Symbol M., "JC 16; °C/W »JA 57 °c;w •,„««.,- JE DECH W »-.d 0.1. Quality Semi-Conductors Unit 2N6040 thru 2N6042 PNP (continued) 2N6043thru 2N6045 NPN MJE6040 thru MJE6042 PNP MJE6043 thru MJE6045 NPN •ELECTRICAL CHARACTERISTICS ITC • 26°C unless otherwise noted) Characteristic OFF CHARACTERISTICS CollectonEmitter Sustaining Voltage (I C . 100 mAdc I B - 01 Collector (V C E IVCE IVCE 2N6040. 2N6043 MJE6040, MJE6043 2N6041. 2N6044. MJE6041. MJE6044 2N6042. 2N6O45 UJE6042. MJE6045 Cutoff Current ' 30 Vdc, IB • 01 - 40 Vdc. IB - 0) ' 50 Vdc, IB - 01 2N6040. 2N6043, MJE6040. MJE6O43 2N6041, 2N604-4. MJE6041, MJE6O44 2N6042 2N6045. MJE6042, MJE6045 "CEOItull - 'CEX Collector Cutoff Current !V rB 60 Vdc. | E ' 01 (Vca 8 0 V d c ' l e 01 IV rB 100 Vdc, IE 01 ICBO Emitter Cutoff Current IV fl £ *) 0 V<tc, lc - mAdc 'CEO Collector Cutoff Current IVce '60 Vdc. VsEioffl " I.SVdcl 2N6040. 2N6043, MJE6040. MJE6043 IVCE 80 Vrtc. V B £ ( 0 t f | - 1 5 Vdc) 2N6041. 2N6O44, MJE6041. MJE6044 IV C E ' 100 Vdq. V B E I o ( f | ' 1 5 Vdcl 2N6042, 2N6M5. MJE6042. MJC6045 1VC6 - 60 Vdc. VBE|0|M - 1 5 Vdc. TC - 125°CI 2N6040. 2N6043. MJE6040. MJE6043 (VcE 80V*. VBE|0),| 1 5 Vdc. T c - 125°C] 2N6041. 2N6044. MJE6041. MJE6044 IVCE 100 Vdc, V BE | oM , - 1 5 Vdc, T C - 125°C] 2N6042, 2N6M5. MJE6042. MJE604S 2N6040. 2N6043. MJE6040. MJE6043 2N6041.2N6044, MJE6041. MJ66O44 2N6M2. 2N604b, MJE6042. MJE604B Vdc SO 80 100 05 05 OS as mAdc 05 0$ 50 - 50 50 mAdc 05 OS 05 mAdc 'EDO 20 01 ON CHARACTERISTICS DC Current Gam llc 4 0 A 1c VfE 4 0 V t l r l 2N604041 ?NB043 44 MJEG04041 MJE6043.44 li t - ;j 0 A l<- V(-E 4 0 V i t c l 2N6042 ?NtiO4r, MJEG042 MJEG04b D[- H O A t r , VrE 4 0 Viti 1 All Types Collector Emit er Saturation Voltage IIC 4 0 A t c IB IGmAdcl 2N6O40.4I.2N6043.44.MJE6040.41 .MJE6043.44 ' I C ' J O A k I Q 12 mAdc)' 2N6042 2N6O45 MJEG042 MJEG045 DC R O A I c . IB HOmA.le) All Types "FE 1000 1000 20.000 20000 100 v CElutl Vdc - - 8aseEmitter Saturation Voltage llrj 8 0 Aitc, ly 80 mAdcl vBEIs«tl gase E miller On Voltag« llc - 4 0 Adc, VCE 4 0 Vifc) v BE(onl 20 20 40 ( Vdc 45 Vdc 28 DYNAMIC CHARACTERISTICS Current Gain Randwulth Product IIC 3 0 Ailc. V(;E 4 0 Vdc, f Outout Cdoacitance IVCB 10 Vdc. IE MHz Irifel 40 1 0 MH/I Cob 0,1 OlMHil Small Signal Current Gam HC 3 0 A i l c . V C6 4 0 Vdc. f 300 200 2N6040/2N6W2.MJE6040/MJE6042 2N6CW3/7N6O45, MJEG04:I/MJEG045 "fe IQkH^I •Indicates JEDEC Registered Data * Choice of Packages: MJE6040 - MJE6045 (TO-127) MJE6040T - MJE6045T (TO220AB) 300 - , Pf - ' STYLE 2 PIN 1 EMITTER 2 COLLECTOR 3 BASE MILLIMETERS DIM MIM MAX A 9 C 0 F 6 H J K M 0 R U V 16.13 12.57 16.39 12.83 3.18 1.09 3.51 3.43 1.24 3.76 4.2 BSC 2.67 2.92 INCHES MIN MAX 0.635 0.495 0.125 0.043 0.138 0.1M 0.105 0.813 0.964 6.41 15.11 1648 059 !6 »* rvp. 4.70 1.91 6.22 2.03 4.95 2.16 6.49 - 0195 0.175 0.4! i TTiO TO 225AB 0.645 0.505 0.135 0.049 0.149 BSC 0.115 0.034 0.645 YP 0.195 0.095 0.255 MIUH 11 IBS WCIES MM inx M • MAX A 14.80 IS 75 0.5 75 0.620 8 9.8S 1029 o.: 80 11405 C 4.08 4.82 0.1 80 11.190 0 0.64 0.88 0.1 25 0.035 f 381 3.73 0.1 42 0.147 2.41 t 2.87 0( IS 0.105 M 2.79 3.93 0.1 10 0155 J 038 058 O.f 14 0.022 K 1270 1427 05 M 0.562 I 1.14 1.19 O.C 45 0.055 4.83 5.33 0.1 HI 0.210 • i.84 304 0.1 W 0.120 II 1 ;.04 t-"..i: 11 1.14 I' 1.1 1. DIM T U ¥ I 5.97 0.00 1.14 - ••' ! . J « 117 0. .!'! i.l ( " 0.0. U 2.03 TO220AB 0.080 STYLE I PIN I BASE 2 COUtCTOR 3 EMITTED 4 COLLECTOR NOTES . I DIMENSION H APPLIES TO ALL LEAOS 2 DIMENSION L APPLIES TO LEAOS I AND 3 3 DIMENSION I DEFINES 1 ZONE WHERE ALL BODY AND LEAO IRREGULARITIES ARE ALLOWED 4 DIMENSIONING AND TDLERANCING PER ANSI YI4 SM. 191] 5 CONTROLLING DIMENSION INCH