, One. tSs-mi-donductoi ^P TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N5555 1N5557 FAX: (973) 376-8960 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR FEATURES • PROTECTS CIRCUITS FMM HARMFUL TRANSIENTS • ABSORCS TRANSIENTS UP TO 1500 WATTS FOR IMS • CLAMPING RESPONSE TIME OF 1 PICO SECOND • 1 VMTT CONTINUOUS POWER DISSIPATION • WORKING VOLTA6E RANGE FROM 303 V TO ITS V . HERMETIC SEALED 00-13 METAL PACKAGE DESCRIPTION Transient Absorption Zeners are PN silicon junction zeners. Unlike the voltage regulation characteristics of a zener diode, tneTAZ is designed for transient voltage suppression, Due to the TAZ's fast response time, protection level, and high discharge capability, its application area is very wide for protection against induced lighting, inductive and switching type transients, and can protect any kind of transient sensitive component/equipment, i.e., integrated circuits including secondary protection device in connection with SVP'S in telecommunication applications. The use of TAZ devices in airborne avionics and electrical systems has proven to be highly effective. All dfcneotltni In INCH MECHANICAL CHARACTERISTICS CASK: DO 13 (DO-202AA). welded, hemwlicmlly sealed mcul and (]««. FINISH: All external »urfaces are corrosion rcsutam and leads Mlderable. MAXIMUM RATINGS 1500 Watts for 1 me at Lead Temperature (TZ) 25°C THERMAL RESISTANCE: 100'C/W (Typical) junction to ambient. Operating and Storage Temperatures: -65° to +175°C D.C. Power Dissipation: 1 Watt at TZ = +25°C 3/8" from body Forward Surge Rating: 200 Amps for 8.3 me at TA = +25°C Duty Cycle of 4 pulses per minute maximum. POLARITY: Cathode connected 10 ca«e and marked, WEIGHT: 1.4 grains. MOUNTING POSITION: Any. ELECTRICAL CHARACTERISTICS Jtdec Typ« No. Minimum Breakdown Vottage VBfl Test Current at IT 1N5555 IN55S6 1N5557 1N5558 vat mAdc 33.0 43.7 54.0 191.0 1.0 1,0 1:0 1.0 Rated Standoff Voltage (\*toM> Vdc Maximum (RMS) Reverse Voltage *rwm Vrms 30.5 40.3 49.3 21.5 28.5 34.5 175.0 124,0 Maximum Maximum Peak Reverse Reverse Leakage Voltage Current (iQlatVwM (VC Max.) atlpp MAdc 5 5 S V 47.5 63.5 78.5 265.0 Maximum Reverie Surge Current (Inn* 1 pp> A 32 24 19 5.7 Temperature Coefficient (TA) -55'Cto100*C at 1.0 mAdc v°c + + + + .093 .094 .096 .100 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors