20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Anode to Cathode - Ratings Voltage 1) SILICON THYRISTORS Ratings Symbol BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 VR Continuous Reverse Voltage 100 200 300 400 500 V VRWM Crest Working Reverse Voltage 100 200 300 400 500 V 120 240 350 500 600 V 120 240 350 500 600 V VRRM VRSM Repetitive Peak Reverse Voltage (5 = 0.01 ; f=50Hz) Non-repetitive peak reverse voltage (t<10ms) VDWM Crest Working off-state Voltage 100 200 300 400 500 V VD Continuous off-state Voltage 100 200 300 400 500 V 120 240 350 500 600 v2) 120 240 350 500 600 V2) VDRM VDSM Repetitive peak off-state voltage (8 = 0.01 ; f=50Hz) Non-repetitive peak off-state voltage (t<10ms) Currents Symbol Ij(AV) IT Ratings BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Average on-state current TCASE=105°C (averaged over any 20 TAMB=60°C, in ms period) free air On-state Current (D.C.) TCASE=100°C IT(RMS) RMS on-state Current Max: 1.0 A Max : 250 mA Max : 1 .6 A Max : 1 .6 A «SP». NJ .Semi-CondiwtORi reserves the righl lo change test condition*, parameter limits ;uid package dimensions without notice Information liimidwd by NJ S<mr-CunJu«tors it believed tu he holh acuirale and retiunl* iM the tinw of guing to pres*. However M Semi-I ondiKkirs .UMIIIKS no responsibility for ;my ermrs i>r omissions Jiso)V«red in its use NJ Senii-CoiidiMurs cncourasies • .II-;K nicrs tnvcpil'\i il:iiashccts ;ire i urrcnt before pine ing unto* ITRM ITSM Tj Tsta BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Ratings Symbol Max: 10 A 10A V Max : 125°C -55to+125°C °C Repetitive Peak on-state Current Non-repetitive peak on-state current t=10ms ; Tj=125°C prior to surge Junction Temperature Storage Temperature 1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor R<1 kii is connected between gate and cathode 2) The device is not suitable for operation in the forward breakover mode. Gate to Cathode - Ratings With 1£1 resistor between gate and cathode Symbol BTX18 -100 Ratings BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 VFGM Forward Peak Voltage Max : 10 V V VRGM Reverse Peak Voltage Max : 5 V V IFGM Forward Peak Current Max : 0.2 A PG<AV> Average Power Dissipation (averaged over any 20 ms period) Max : 0.05 W PGM Peak Power Dissipation Max : 0.5 W Temperatures Symbol BTX18 -100 Ratings BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 10 °c/w From Junction to Ambient 200 °c/w Transient Thermal Resistance (t=10 ms) 2.5 °c/w R«i j-c From Junction to Case Rth J-a Zthj-c Anode to Cathode - Characteristics Ratings Symbol VT On State Voltage IT=1 .0 A, Ti=25°C ! I BTX18 -100 BTX18 -200 BTX18 -300 1.5 1.5 1.5 BTX18 BTX18 -400 -500 1.5 1.5 v1) Symbol IRM 'DM BTX18 BTX18 BTX18 BTX18 BTX18 -500 -100 -200 -300 -400 Ratings Peak Reverse Current < VRM=VRWmax i Tj=125°C I Peak off-state Current j VDM=Vowmax i Tj=125°C I IL Latching current, Tj=125°C IH Holding Current ; T,=25°C 800 400 275 200 160 HA 800 400 275 200 160 HA j< Typ: 10 mA 5.0 2) mA Gate to Cathode - Characteristics Symbol VGT VGD IGT BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings Voltage that will trigger all devices > Tj=25°C Voltage that will not trigger any device < Ti=125°C Current that vill trigger all devices I Ti=25°C | 2.0 V 200 mV 5.0 mA Switching Characteristics Symbol BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Ratings I Turn off time when switched from IT=300 mA to IR=1 75 mA I DM Peak off-state Current VDM=VDWITOX ; Tj=125°C i Tr25 C i i™ "'""'""" ' 1 ^ |Ti=125C | < 1) V T is measured along the leads at 1 cm from the case 2) Measurer under the following conditiond : Anode sypply voltage= +6.0V Initial on-state current after gate triggering= 50mA The current is reduced until the device turns of. Type : 20 |1S Typ : 35 800 400 275 200 160 US