Transistor - New Jersey Semiconductor

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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N2840
Silicon Unijunction
Transistor
absolute maximum ratings: (25°C)
300
50
2
30
35
-65 to+150
-65 to +175
Power Dissipation*
RMS Emitter Current
Peak Emitter Current**
Emitter Reverse Voltage
Interbase Voltage
Operating Temperature Range
Storage Temperature Range
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* Derate 2.4 mw/"C increase in ambient temperature. Maximum power available to
the transistor must be limited by external circuitry to be within this rating.
**Capacitor Discharge—10 ^fd or less, 30 volts or less.
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electrical characteristics: (25°C)
PARAMETER
Emitter Peak Point Voltage (V BB = 1.50V)
Emitter Peak Point Current (V BB = 1.50V)
Intrinsic Standoff Ratio (Van = 10V) ***
Emitter Valley Point Voltage ( VBB = 1.50V)
Emitter Valley Point Current (V a » = 1.50V)
Emitter Base Saturation Current (V BB — 1.50V; VE , = 1.50V)
Emitter Reverse Current (VjKg = 30V; IBi =.- 0)
Interbase Resistance (V B B = 1.50V; IE = 0)
V,
Min.
Typ.
Max.
1.30
1.4
7.5
.62
1.50
10
volts
.95
.40
40
.05
7
1.10
.70
volts
ma
ma
IP
11
Vv
.20
20
Iv
IECSA
IEO
4.7
RBB
***, is denned by the equation Vf = i» VBB + VD where VD — .5V.
TEMPERATURE
COEFFICIENT, MV/'C
10%
frfc
IEISATI
MED
Vp
-2.8
-3.4
VB
-1.7
-2.0
90%
-4.0
.-2.4
Nl SemK inidutlun res«rve-i ih« right to change t«Jl conditions. panun«t«r limits nnd package dimensions without notice
Information liimislwd by NJ Scmi-C'unducWM i$ believed to be both accuraM ami reliable it the lime of going to press. However \
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