TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4851 thru 2N4853 PIM Unijunction Transistors Silicon Unijunction Translators ... daalgned for pulse and timing circuits, sensing circuits, and thyrlator trigger circuits. • Low Peak-Point Current — Ip - 0.4 iiA Max • Low Emitter Reverse Current— IEO - 60 nA Max • Part Switching PNUJTs CASB22A-01 •MAXIMUM RATINGS (TA - 2S'C unlau othtnvh* noted.) ^ Value Unit RMS Power Dissipation, Not* 1 PD 300 mW RMS Emitter Currant la 60 Peak-Pulia Emitter Currant, Nota 2 >a 1.8 mA Amp Emitter Revert* Voltage VB26 30 Volte Interbaaa Voltage, Note 3 VS2B1 35 Volt* Tj -66 to +125 Tstg -B5to +200 •c °c Ritlnj Operating Junction Temperature Renga Storage Temperature Range Symbol •tndleiui JEOEC RMltUrad D««. NOIMI 1,0«tate 3 mWTC IncnaM In ambient MmpiiMur*. 2. Duly eycti« tH. PUR - (<>• Haun a). 3, Bund upon powtr dhalpatlon at TA - 26'C. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N4M1 thru 2N4883 ELECTRICAL CHARACTERISTICS (TA • iyc ""'«" othatwlaa noted,) Rltlng •Intrinsic Standoff Ratio, Nota f IVB2B1-10V) Fig. No. Symbol 4,8 1 2N4B51 2N4852, 2N48S3 •Intarbaaa Reslatanca WBZB1 - 3 V , le = 0) •Intarbaie Raflitanea Temperature Coofficlont (VB2B1 - sv, IB - O,TA - -esto -nara 9.1 kohma O.B we 0.2 7 — 2.B — IB — IV 2N4861 ZN48K 2N4863 S mA 0.1 0.06 — 2 0,4 MA mA 2 4 0 3,17 — fp — 13.14 — Vote fA — 9.10 — >EB20 2N48S1, 2N43S2 2N48B3 •Maximum Frequency of Oscillation —. Untt MM DBS 2N4861, 3N48S2 2N4fl63 2N48B1 2N48B2 2N4S53 — 0.75 0.85 12 ^(mod) »B«<«-Ona Peak Pulia Voltaoa 0.66 0.70 4.7 Modulated Intsrbate Currant (VB2B1 - 10 V, IE - 50 mA) •Vallay-Ptilnt Currant, Nota 2 (VBJB1 - 20 V, Rfl2 - 100 ohma) Max TO vEB1(e»t) *Peak-Polnt Emitter Currant (VB2B1 - 26 V) Typ 11,12 Emitter Saturation Voltaga, Nota 2 (VB2B1 - tOV.lE - 50mA) •Emitter Reverse Currant (VB2E - 30 V, IB1 - 0) Mln VOBI 3 B 6 '(max) — - — Voltt ^ .— 0.26 — MHz •Indkawt JEDiC Rtgltterad Pata. V - ii VBJBI + VF- whm VF It Notes: 1,, tl, Intrinsic standoff ratio, It daflnad hi tumi of th* paak-p«lm voltaoa, Vp, by meant of ih« aquation; w: Vp about 0/M volt «t 25*C ^j 1^ - 10 ^A and dtara«ai with tamparalunt at ibout 2.B mVrC. Th* tutcircuit clra It ihown In Flgur* 4. Comporwnti RV C), and thi UJT form a rilaxatlon owlllator: thcnrnalntna circuitry urvit 11 apeak-vohao.* po«k-vo!Hfl«dMMtor. dllttl Tn* forvwrd drop of Dlodt Oi campenutM tor VF. to un, Hi* "eal" button It puihed. tnd RS It adjutted 10 mite tha current rtwttr, MI, r««d full Male. Whm tho "c*l" button It nlMttd, thi value of *, It raid dlraedy fram Ihi meter, If full icala an thi iratar niada 1. 2. Un pull* Mchnlqutt: PW - 300 fit. duty cyd* « 2% to twld Inttmtl hutlng. whloh nuy muk hi orranwua rndlnot. FIQUR81-UNI JUNCTION TRANSISTOR SYMBOL AND NOMINCLATURR FIQUHS a -STATIC EMITTER CHARACTERISTICS CURVES U- SATURATION I EMITTER TO BASB ONI CHARACTERISTIC