Lpioauati, Line.
J.£.I±£.LI
C/
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RFM5P12, RFM5P15, RFP5P12, RFP5P15
P-Channel Enhancement-Mode
Power Field-Effect Transistors
5 A, 120V — 150V
Featurer
SOA Is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High Input Impedance
Majority carrier device
P-CHANNEL ENHANCEMENT MODE
TERMINAL DESIGNATIONS
RFM5P12
RFM5PI5
The RFMSP12 and RFM5P15 and the RFP5P12 and RFP5P15 •
are P-Channel enhancement-mode silicon gate power
field-effect transistors designed forhlgh-speed applications
such as switching ragulators, switching converters, relay
drivers, and drivers for high-power bipolar switching
transistors.
JEDEC TO-204AA
The RFM-Series types are supplied In the JEDEC TO204AA metal package and the RFP-Serles types in the
JEDEC TO-220AB plastic package. All these types are
supplied without an internal gate Zener diode.
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (TC = 25°C):
DRAIN-SOURCE VOLTAGE
£ (R
(Rgg
ORAIN-QATE VOLTAGE
0, — 1 Mil)
VOOR
GATE-SOURCE VOLTAGE
DRAIN CURRENT RMS
Pulsed
POWER DISSIPATION
PT
@ Tc = 25-C
Derate above Tc = 25°C
OPERATING AND STORAGE TEMPERATURE T,. T,«
RFM5P12
RFM5P15
RFP5P12
RFP5P1S
-120
-150
-120
-150
60
0.6
0.6
0.48
60
0.46
V
V
V
A
A
W
W/'C
. -55 to +150 -
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFM5P12, RFM5P15, RFP5P12, RFP5P15
LIMITS
CHARACTERISTIC
SYMBOL
Drain-Source Breakdown Voltage
BVDS8
TEST
RFM5P12
RFM5P15
CONDITIONS
RFP5P12
Mln.
Max.
RFP5P15
Mln.
Max.
-120
-
-150
-
V
-2
-4
-2
-4
V
:
-
1
—
ID = 1 mA
Vos = 0
Gate-Threshold Voltage
VGSHM
Vos = Vos
ID = 1 mA
Zero-Gate Voltage Drain Current
Vos = -100 V
loss
VDS = -120 V
T C =125°C
VDS = -W>0 V
Vos = -120V
Gate-Source Leakage Current
Vos = ±20 V
loss
Voa = 0
Drain-Source On Voltage
ID = 2.5 A
Vostonl
Vos =-10 V
lo = 5A
VGS = -10 V
Static Drain-Source On Resistance
ID = 2,5 A
roSlon)
VM = -10 V
Forward Transconductance
g..'
Input Capacitance
Ci.,
Output Capacitance
Reverse-Transfer Capacitance
Co..
Turn-On Delay Time
Vos = 10 V
50
100
-
100
-2.5
-
-2.5
-8
-
-8
1
-
1
n
mho
0.75
-
Vos = 25 V
Vas = 0 V
700
700
—
300
—
„
c™
f = 1MHz
—
100
—
100
tdlonl
VDD - 1/2 BVoss
20(typ.)
60
20(typ.)
60
36(typ.)
Ra.n = Rj, = 50fl 63(typ.)
100
100
150
36(typ.)
63(typ.)
150
40(typ.l
100
40(typ.)
100
-
1.67
-
1.67
-
2.063
-
2.083
ID = 2.5 A
tflwin
Fall Time
It
Vos = 10 V
R«JC
RFM5P12,
RFM5P15
nA
V
-
t,
Thermal Resistance Junctlon-to-Case
M
50
—
Rise Time
Turn-Off Delay Time
1
0.75
lo = 2.5 A
UNITS
300
PF
ns
"C/W
RFP5P12.
RFP5P15
•Pulsed: Pulse duration - 300 AIS max., duty cycle - 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SYMBOL
TEST
CONDITIONS
Diode Forward Voltage
VSD
Iso = 2.5A
Reverse Recovery Time
U
U = 4A
d,F/d, - 100A/«(s
CHARACTERISTIC
•Pulse 1 a,'.; Width < 300 jis, Duty Cycle < 2%.
LIN TS
HFM5P12
RFMSP1S
RFPSP12
RFP5P15
Mln.
Max.
Max.
Min.
-
1.4
300{typ.)
—
'
1.4
300(typ.)
UNITS
V
ns