P-Channel Enhancement Mode MOSFET Amplifier/Switch

\Pioaucti, Una,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
P-Channel Enhancement Mode
MOSFET Amplifier/Switch
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
FEATURES
• Low ON Resistance
Drain-Gate Voltage
30V
Gate-Source Voltage
+30V
Drain Current
30mA
Storage Temperature Range
-65°C to +200°C
Operating Temperature Range
-55°C to +1 50°C
Lead Temperature (Soldering 10sec)
+300°C
Power Dissipation
300mW
Derate above 25°C
.
1 7mW/°C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
• High Gain
• P -Channel Complement to 2N4341
PIN CONFIGURATION
— ——-
MI
ft
D
2N4352
(J
G
I"
ORDERING INFORMATION
Part
Package
Temperature Range
2N4352
X2N4352
Hermetic TO-72
Sorted Chips in Carriers
-55°C to +1 50°C
-55°C to +1 50°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
' PARAMETER
SYMBOL
MIN
MAX
UNITS
V(BR)DSX
Drain-Source Breakdown Voltage
loss
Zero-Gate-Voltage Drain Current
-10
-10
nAdc
loAdc
loss
Gate Reverse Current
±10
PA
Vos(th)
Gate Threshold Voltage
-5.0
Vdc
VDS(on)
Drain-Source On-Voltage
-1.0
V
lD(On)
On-State Drain Current
rDS(on)
Drain-Source Resistance
-25
-1.0
-3.0
lD = -10nA,VGs=0
VDS = -10V, VGS = 0, TA = 25°C
VDS = -1 0V, VGS = 0, TA = 1 50°C
mA
600
lYfsl
Forward Transfer Admittance
Ciss
Input Capacitance
5.0
Crss
Reverse Transfer Capacitance
1.3
Cd(sub)
Drain-Substrate Capacitance
5.0
td1
Turn-On Delay
45
tr
Rise Time
65
td2
Turn-Off Delay
60
tf
Fall Time
100
1000
TEST CONDITIONS
Vdc
VGS = ±30V, VDS = 0
VDS = -10V, !D = -10uA
ID = -2mA, VGS = -1 0V
VGS =-10V, VDS = -10V
ohms
VGS = -10V, ID = 0, f= 1.0kHz
Hmho
VDS = -10V, ID = 2.0mA, f = 1 .OkHz
VDS = -10V, VGS = 0, f = 140MHz
PF
Vos = 0, VGS = 0 , f = 140MHz
VD(aub)=-10V, f = 140kHz
ns
ID = -2.0mAdc, VDS = -10Vdc
VGS = -10V
NJ Semi-Conducton. reserves the right to change test conditions, parameters limits and package dimensions without
nonce infomution famished by NJ Semi-Conductois is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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