j.ziis.1) <^>£.mi-L.onaiLctot L/-* 10 ducts., [inc.
£/
J
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFZ44/45
IRFZ40/42
N-CHANNEL
POWER MOSFETS
FEATURES
TO-220
Lower RDs (ON)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Lower input capacitance
Extended safe operating area
Improved high temperature reliability
IRFZ44/IRFZ45
IRFZ40/IRFZ42
PRODUCT SUMMARY
Part Number
VDS
Ros(on)
IRFZ44
60V
0.028(1
35A
IRFZ45
60V
0.035(1
35A
IRFZ40
50V
00280
35A
IRFZ42
50V
; 0035(1
35A
ID
Current limited by wire 8 pin diameter
MAXIMUM RATINGS
Characteristic
Symbol
IRFZ44
IRFZ45
IRFZ40
IRFZ42
Unit
Drain-Source Voltage (1)
VDSS
60
50
Vdc
Drain-Gate Voltage (Rcs=1 OM(1)(1)
Gate-Source Voltage
VDGR
60
50
Vdc
Continuous Drain Current Tc = 25°C
ID
35
35
35
35
Adc
Continuous Drain Current Tc=100°C
ID
35
33
35
33
Adc
210
190
210
190
Adc
Drain Current— Pulsed (3)
Vdc
± 20
VGS
IDM
Gate Current— Pulsed
IGM
±1 5
Adc
Single Pulsed Avalanche Energy (4)
EAS
53
mj
Avalanche Current
IAS
35
A
Total Power Dissipation at Tc=25°C
Derate above 25°C
Po
1£ >0
1 2
Watts
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
Notes: (1)
(2)
(3)
(4)
Tj. Tstg
TL
-55 t 0 175°
3C 0
W/°C
°C
°C
Tj=25°C to 175°C
Pulse test. Pulse width<300^s, Duty Cycle<2%
Repetitive rating: Pulse with limited by max junction temperature
L=50MH, Vdd=25V. RG=25(1, Starting Tj=25°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placina orders.
Quality Semi-Conductors
IRFZ44/45
IRFZ40/42
N-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Min
Symbol
Characteristic
BVoss
Drain-Source Breakdown Voltage
IRFZ44/45
IRFZ40/42
60
50
VGSIthI
Typ
Max Units
Test Conditions
Vos=OV, b = 250MA
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
loss
Gate-Source Leakage Forward
—
—
100
nA
loss
Gate-Source Leakage Reverse
—
—
-100 nA
V GS =-20V
loss
Zero Gate Voltage Drain Current
—
250 K*
1000 MA
VDS=Max. Rating Vos=OV
Vos=0 8Max. Rating, VGS=OV. TC=150°C
IDIOT)
On-State Drain-Source Current (2)
RoS(on|
QIS
Static Drain-Source
On-State Resistance
35
—
IRFZ44/40
IRFZ45/42
Forward Transconductance (2)
15
-
VOS=VGS, lo=250^A
VQs=20V
-
A
0.028
0.035
0
-
u
Vos^SOV, I D -33A
VDS^1 2V VQS=10V
V G s=10V, ID=33A
C,ss
Input Capacitance
-
2450
-
pF
Vos=OV
COM
Output Capacitance
—
740
—
PF
V D s=25V
Crss
Reverse Transfer Capacitance
-
360
-
PF
f= 1.0MHz
tfl(on|
Turn-On Delay Time
-
—
32
ns
Rise Time
-
-
210
ns
Turn-Off Delay Time
—
—
75
ns
Fall Time
—
-
130
ns
Qfl
Total Gate Charge
(Gate-Source Pulse Gate-Drain)
-
-
100
nC
Qgs
Gate-Source Charge
—
—
21
nC
Q9<j
Gate-Drain ("Miller") Charge
-
-
58
nC
t,
td(oll)
tl
(MOSFET switching times are essentially
independent of operating temperature)
VGs=10V, b = 52A, Vos = 0.8Max Rating
(Gate charge is essentially independent of
operating temperature )
THERMAL RESISTANCE
RthJC
Junction-to-Case
MAX
1.0
K/w
Rthcs
Case-to-Smk
TYP
05
K.'W
Mounting surface flat
smooth, and greased
RIUJA
Junction-to-Ambient
MAX
80
K/W
Free Air Operation
Notes: (1) Tj = 25°C to 175°C
(2) Pulse test Pulse width<300ns. Duty Cycle<2%
(3) Repetitive rating Pulse width limited by max junction temperature
IRFZ44/45
IRFZ40/42
..-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Win
Characteristic
Is
Continuous Source
Current (Body Diode)
IRFZ44/40
IRFZ45/42
ISM
Pulse-Source Current
(3)
IRFZ44/40 —
IRFZ45/42 |
VSD
trr
Typ
—
Diode Forward Voltage All
_
—
Reverse Recovery Time
Max
Units
3fa
35
A
A
210
190
A
A
Test Conditions
Modified MOSFET
integral reverse
P-N junction rectifier
«4°
—
2 5
V
T C =25°C, IS=35A, VGs=OV
-
250
ns
T, = 25°C. IF = 35A, dl F /dt=100A/^S
Notes: (1) Tj=25°C to 175°C
(2) Pulse test Pulse widthOOOys, Duty Cycle<2%
(3) Repetitive rating Pulse with limited by max junction temperature
6
12
18
24
30
36
10
VDS. DRAIN-TO SOURCE VOLTAGE (VOLTS)
12
14
Vos, QATE-TO-SOURCE VOLTAGE (VOLTS)
Typical Output Characteristics
Typical Transfer Characteristics
0
' OPERATfON hN THIS AflEA
0
IRFZ4 4/40 -p»
r- _^ *
gI
KSSS?
|
10' -r^-*
I
-j
5
r
Z 4 4/40
t=^H:
IRF,? 45 12 S
"DSfon
[ j^_
.-..
^s"
-
\
11
:i||
^
\1
1ms
1
; 1
->
|L—
- -
i^
| DC
1
05
1b
""15
20
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Typical Saturation Characteristics
25
5
10
5
10'
5
S, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Maximum Safe Operating Area
10'