<Szm.L-donciu.ctoi ^PiodacU, line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
Silicon Controlled Rectifiers
•
50V to 600V
•
5 A DC
•
30 A Surge Current
•
MAX IQT of 200 A
device schematic
TO-Z2DAB PACKAGE
1
THE ANODE IS IN ELECTRICAL CONTACT WITH
THE MOUNTING TAB. THE DATE TERMINAL IS
CONNECTED TO A "f" REGION.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Repetitive peak off-state voltage, VQRM (see Note 1 )
Repetitive peak reverse voltage, VRRM
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (1 80° conduction angle) at (or below)
80°C case temperature (see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse duration < 300 ps)
Peak gate power dissipation (pulse duration < 300 ps)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1,6mm (1/1 6 Inch) frorn case for 10 seconds
TIC106F
TIC106A
50V
60V
100V
TIC108B
200V200V
100V
TIC108C
300V
300V
BA
3.2A
30 A
0.2 A
1.3W
0.3 W
-40«Cto110°C
-40°Cto125°C
230°C
NOTES: 1. These values apply when the gate-cathode resistance RQK » I kQ.
2. These values apply for continuous d-c operation wtth resistive load. Above 80CC derate according to Figure 3.
3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with reslatlve load. Above 80°C
derate according to Figure 3.
4. This value applies for one 50-Hz Mf-sine-wave when the device is operating at ior below) rated valutt of ptak reverse
voltage and on-3tate current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIC106A, TIC106B, TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
TIC106D
400V
400V
Repetitive peak off-state voltage, VQRM (see Note 1 }
Repetitive peak reverse voltage, VRRM
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (1 80° conduction angle} et (or below)
80°C casa temperature (see Note 3}
Surge on-state current (see Note 4}
Peak positive gate current (pulse duration < 300 us)
Peak gete power dissipation Ipulsa duration < 300 pg)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1,6mm (1/1 6 inch) from case for 10 seconds
TIC106E
500V
600V
BA
TIC106M
600V
600V
3.2A
30 A
0.2 A
1,3W
0.3W
-40°Cto110°C
-40 'Cto-WC
230°C
NOTES: 1. These values apply when the gate-cathode resistance RQK = 1 kfi.
2. These values apply for continuous d-c operation with resistive load. Above 6O*C derate according to Figure 3.
3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with resistive load. Above 8O°C
derate according to Figure 3.
4. This value applies for one 50-M2 haif-slne-wave when the device Is operating at (or below) rated values of peak reverse
voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium,
5. This value applies for a maximum averaging time of 20 m$.
electrical characteristics at 25°C case temperature (unless otherwise noted)
IDHM
R<""ititiv<"'Mk
Off-State Current
IRRM
IQY
VGT
ReP=*lv»P"k
Reverse Current
Gate Trigger Current
Gate Trigger Voltage
VD - Rated VDRM,
VTM
dv/dt
Peak On-State Voltage
Critical Rate of Rise
of Off-State voltage
Tc « i io°c
VR = Rated VRRM,
IG = 0,
TC = 110°C
R L =1000.
tw(0)i»20HS
VAA = 6V,
RL = 1000.
RQK - 1 ka
t w(g) >20 M s,
TC=-40°C
VA A = e v,
RL » 100Q,
HQK » i ko,
tw[fl);» 20 us.
•wlfl) * 2°fsHolding Current
RGK = i ka,
VAA = 6V.
VAA = ev,
IH
MIN TYP MAX
TEST CONDITIONS
PARAMETER
VAA = 6V,
V AA = 6V,
TC = -40«C
I T M .5A,
VD = Rated VD,
H L =IOOB,
RGK = ika,
TC = - 1 10°C
60
4OO
CA
1
mA
200
^A
1.2
0.4
0.6
1
E
e
See Note 6
1.7-
TC = 110°C
V
0.2
RQK = i ka,
initiatina IT = iomA
RGK = 1 ka,
Initiating IT ~ tOmA,
HQK = 1 kQ,
UNIT
mA
V
V/ta
10
NOTE 6: These parameters must be measured using pulse techniques, tw = 300 ps, duty cycle < 2 %. Voltage-sensing
separata from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body.
thermal characteristics
PARAMETER
R0JC
RSJA
MIN TYP MAX
3.6
62,6
UNIT
•C/W
TIC106A, TIC106B. TIC106C, TIC106D,
TIC106E,TIC106F,TIC106M
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
resistive-load switching characteristics at 25°C case temperature
PARAMETER
Gate-Controlled
Ql
Turn-On Time
Circuit-Commutated
Tum-Off Time
tq
MIN TYP MAX
TEST CONDITIONS
VAA = 30 v.
V|na50V,
VAA = 30V.
See Figure 2
RL = s a.
RGKiott i = 6 kc.
Sea Figure 1
RL = 69,
'
IRM = 8A,
UNIT
1.76
IIS '
7.7
PARAMETER MEASUREMENT INFORMATION
v2 o.
Vi o.
VOLTAGE WAVEFORMS
WAVEFORMS
TEST CIRCUIT
TEST CIRCUIT
FIGURE 1 . GATE-CONTROLLED TURN-ON TIME
A.
B.
C..
D.
E.
FIGURE 2.
CIRCUIT-COMMUTATED TURN-OFF TIME
V;n Is meaaured with gate and cathode terminals open.
The input waveform of Figure 1 has the following characteristics: tr < 40 ns, tw > 20 ia.
Waveforms are monitored on an oscilloscope with the following characteristics: tr< 14ns, R|n* 10MB, C(n< 12pF.
RGKIeff ) includes the total resistance of the generator and the external resistor.
Pulse generators for V-) and V2 are synchronized to provide an anode current waveform wrrh the following characteristics:
tm = 60 to 300 its, duty cycle = 1 %. The pulse widths of V j and Vj are > 10j«.
F. Resistor RI is adjusted for !RM= 8 A.