<Szm.L-donciu.ctoi ^PiodacU, line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIC106A, TIC106B, TIC106C, TIC106D, TIC106E,TIC106F,TIC106M P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • Silicon Controlled Rectifiers • 50V to 600V • 5 A DC • 30 A Surge Current • MAX IQT of 200 A device schematic TO-Z2DAB PACKAGE 1 THE ANODE IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB. THE DATE TERMINAL IS CONNECTED TO A "f" REGION. absolute maximum ratings at 25°C case temperature (unless otherwise noted) Repetitive peak off-state voltage, VQRM (see Note 1 ) Repetitive peak reverse voltage, VRRM Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (1 80° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse duration < 300 ps) Peak gate power dissipation (pulse duration < 300 ps) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1,6mm (1/1 6 Inch) frorn case for 10 seconds TIC106F TIC106A 50V 60V 100V TIC108B 200V200V 100V TIC108C 300V 300V BA 3.2A 30 A 0.2 A 1.3W 0.3 W -40«Cto110°C -40°Cto125°C 230°C NOTES: 1. These values apply when the gate-cathode resistance RQK » I kQ. 2. These values apply for continuous d-c operation wtth resistive load. Above 80CC derate according to Figure 3. 3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with reslatlve load. Above 80°C derate according to Figure 3. 4. This value applies for one 50-Hz Mf-sine-wave when the device is operating at ior below) rated valutt of ptak reverse voltage and on-3tate current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors TIC106A, TIC106B, TIC106C, TIC106D, TIC106E,TIC106F,TIC106M P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS absolute maximum ratings at 25°C case temperature (unless otherwise noted) TIC106D 400V 400V Repetitive peak off-state voltage, VQRM (see Note 1 } Repetitive peak reverse voltage, VRRM Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (1 80° conduction angle} et (or below) 80°C casa temperature (see Note 3} Surge on-state current (see Note 4} Peak positive gate current (pulse duration < 300 us) Peak gete power dissipation Ipulsa duration < 300 pg) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1,6mm (1/1 6 inch) from case for 10 seconds TIC106E 500V 600V BA TIC106M 600V 600V 3.2A 30 A 0.2 A 1,3W 0.3W -40°Cto110°C -40 'Cto-WC 230°C NOTES: 1. These values apply when the gate-cathode resistance RQK = 1 kfi. 2. These values apply for continuous d-c operation with resistive load. Above 6O*C derate according to Figure 3. 3. This value may be applied continuously under single-phase 50-Hz half-slne-wave operation with resistive load. Above 8O°C derate according to Figure 3. 4. This value applies for one 50-M2 haif-slne-wave when the device Is operating at (or below) rated values of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium, 5. This value applies for a maximum averaging time of 20 m$. electrical characteristics at 25°C case temperature (unless otherwise noted) IDHM R<""ititiv<"'Mk Off-State Current IRRM IQY VGT ReP=*lv»P"k Reverse Current Gate Trigger Current Gate Trigger Voltage VD - Rated VDRM, VTM dv/dt Peak On-State Voltage Critical Rate of Rise of Off-State voltage Tc « i io°c VR = Rated VRRM, IG = 0, TC = 110°C R L =1000. tw(0)i»20HS VAA = 6V, RL = 1000. RQK - 1 ka t w(g) >20 M s, TC=-40°C VA A = e v, RL » 100Q, HQK » i ko, tw[fl);» 20 us. •wlfl) * 2°fsHolding Current RGK = i ka, VAA = 6V. VAA = ev, IH MIN TYP MAX TEST CONDITIONS PARAMETER VAA = 6V, V AA = 6V, TC = -40«C I T M .5A, VD = Rated VD, H L =IOOB, RGK = ika, TC = - 1 10°C 60 4OO CA 1 mA 200 ^A 1.2 0.4 0.6 1 E e See Note 6 1.7- TC = 110°C V 0.2 RQK = i ka, initiatina IT = iomA RGK = 1 ka, Initiating IT ~ tOmA, HQK = 1 kQ, UNIT mA V V/ta 10 NOTE 6: These parameters must be measured using pulse techniques, tw = 300 ps, duty cycle < 2 %. Voltage-sensing separata from the current-carrying contacts, are located within 3,2 mm (1/8 inch) from the device body. thermal characteristics PARAMETER R0JC RSJA MIN TYP MAX 3.6 62,6 UNIT •C/W TIC106A, TIC106B. TIC106C, TIC106D, TIC106E,TIC106F,TIC106M P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS resistive-load switching characteristics at 25°C case temperature PARAMETER Gate-Controlled Ql Turn-On Time Circuit-Commutated Tum-Off Time tq MIN TYP MAX TEST CONDITIONS VAA = 30 v. V|na50V, VAA = 30V. See Figure 2 RL = s a. RGKiott i = 6 kc. Sea Figure 1 RL = 69, ' IRM = 8A, UNIT 1.76 IIS ' 7.7 PARAMETER MEASUREMENT INFORMATION v2 o. Vi o. VOLTAGE WAVEFORMS WAVEFORMS TEST CIRCUIT TEST CIRCUIT FIGURE 1 . GATE-CONTROLLED TURN-ON TIME A. B. C.. D. E. FIGURE 2. CIRCUIT-COMMUTATED TURN-OFF TIME V;n Is meaaured with gate and cathode terminals open. The input waveform of Figure 1 has the following characteristics: tr < 40 ns, tw > 20 ia. Waveforms are monitored on an oscilloscope with the following characteristics: tr< 14ns, R|n* 10MB, C(n< 12pF. RGKIeff ) includes the total resistance of the generator and the external resistor. Pulse generators for V-) and V2 are synchronized to provide an anode current waveform wrrh the following characteristics: tm = 60 to 300 its, duty cycle = 1 %. The pulse widths of V j and Vj are > 10j«. F. Resistor RI is adjusted for !RM= 8 A.