20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.3.A.
TELEPHONE: (973) 376-2922
(212) 227400S
FAX (973) 376-8960
NPN Silicon Darlington Transistors
BD843
BD645
BD847
BD649
Eplbase power darlington transistors (62.5W)
BO 643, BD 645, BD 647, and BD 649 are monolithic NPN Silicon epibase power darlington
transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors
of the two transistors are electrically connected to the metallic mounting area. These
darlington transistors for AF applications are outstanding for particularly high current
gain. Together with BD 644, BO 646, BD 648, and BD 650, they are particularly suitable
for use as complementary AF push-pull output stages.
Type
BD643
BO 643/BD 644
BD64S
BO 645/8D 646
BD647
BD 647/BD 648
BD649
BD 649/BD 650
Insulating nipple
Mica washer
Spring washer
A 3 DIN 137
Chang* In dimensional drawings in preparation.
Approx. weight 18 g.Dlmanaion) In mm
Maximum ratings
BD643 BD645 BD647 BD649
Collector-emitter voltage
VCEO
Collector-base voltage
VCBO
Base-emitter voltage
VEBO
Collector current
h
Collector-peak current [t < 10 ms) ICM
Base current
IB
Storage temperature range
Junction temperature
Ti
Total power dissipation
Pfot
45
45
5
8
12
150
60'
60
5
8
12
150
150
150
150
150
V
V
V
A
A
mA
°C
"C
62,5
62,6
62,5
62,5
W
£80
&2
£80
£80
32
£80
£2
K/W
K/W
80
80
5
8
12
160
100
100
5
8
12
150
-55 to + 150
Thermal resistance
Junction to ambient air
Junction to case11
flthJC
N.I Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable M (he time or going to p/ess. However VI
Scnii-L iinductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-C onducturs encourages
aistomcrs to verity ihiil datasheets are current before placing orders
BD643
BD045
BO 647
BD649
Static characteristics (Tamb - 25 °C)
BD643
BD64S
BD847
BD649
Collector cutoff current
(VCB " VcBmax)
^CBO
<0.2
<0.2
<0.2
<0.2
(VcB - VcBmax; Tamb = 100°C)
Collector cutoff current
/CBO
<2
<2
<2
<2
mA
mA
(VCE * 0.5 Vc£maX)
1CEO
<O.S
<0.5
<0.5
<0.5
mA
<B
<5
<B
<5
mA
VUWCEO
>4S
>60
<80
>100
V
V(Bn)CBO
>4S
>eo
>80
>100
V
V,BR)EBO
>5
>5
>6
>5
V
1600
>760
1500
>750
1500
>750
1500
>760
750
750
750
750
-
<2.5
<2.5
<2.5
<2.5
V
<2
<2
<2
<2
V
1.8
1.8
1.8
1.8
V
7(>1)
7{>1)
7{>1)
7(>1)
MHz
60
60
60
60
kHz
Emitter cutoff current
(VEB = 5V)
Collector-emitter breakdown
voltage (/c = 1 00 mAI'l
Collector-base breakdown
voltage (/e = 5 mA)
Emitter-base breakdown
voltage (4 =» 2 mA)
/EBO
DC current gain
(/c- 0.5 A. VCE -3V)
hfE
l/C = 3A,V C E = 3V)
hre
(/C = 6A,V CE = 3V)
hK
Base-emitter forward voltage
(/c = 3A,V C E = 3V)
VBE
Collector-emitter saturation
voltage'
(/ c -3A,/ B = 12mA)
VCEM,
Forward voltage of the protective
diode at 4 = 3A
VF
Dynamic characteristics (famb " 25 °C)
Transition frequency
(/c = 3A,V CE = 3V,f=1MHz) (V
Cutoff frequency in common
emitter configuration
(/c = 3A;V C E = 3V)
U
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