2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Transistors General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS !External dimensions (Units : mm) 2SA1576A 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 (2) 0.95 0.95 1.9 2.9 (3) 1.25 1.6 2.1 0.1to0.4 0to0.1 0.3to0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : F ∗ 2SA2029 0.5 0.13 0to0.1 0.7 0to0.1 0.55 0.15 ROHM : EMT3 EIAJ : SC-75A (1) Emitter (2) Base (3) Collecto ROHM : VMT3 EIAJ : Abbreviated symbol : F ∗ 0.8 0.22 (1) 1.6 0.1Min. 0.2 (2) (3) 0.4 0.4 1.2 0.32 0.2 0.8 1.2 0.8 0.2 1.6 (2) (3) 1.0 0.5 0.5 (1) 0.2 2SA1774 0.3 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 Abbreviated symbol : F ∗ 0.15Max. (1) Base (2) Emitter (3) Collector Abbreviated symbol : F ∗ 2SA933AS 2 (15Min.) 3Min. 3 4 0.45 2.5 0.5 0.45 5 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 ∗ Denotes hFE 0to0.1 0.15 1.1 0.8 0.15 0.2 2.8 !Structure Epitaxial planar type. PNP silicon transistor 0.7 (1) 2SA1037AK 0.4 !Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. (1) Emitter (2) Collector (3) Base 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Transistors !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC −0.15 A (DC) PC 0.15 Parameter Collector current 2SA1037AK, 2SA1576A Collector power dissipation 0.2 2SA2029, 2SA1774 2SA933AS W 0.3 Junction temperature Tj 150 ˚C Storage temperature Tstg −55~+150 ˚C !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −60 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1µA Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA Collector cutoff current ICBO − − −0.1 µA VCB=−60V Emitter cutoff current IEBO − − −0.1 µA VEB=−6V VCE(sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 120 − 560 − VCE=−6V, IC=−1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4.0 5.0 pF Collector-emitter saturation voltage DC current transfer ratio Unit Conditions VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz !Packaging specifications and hFE Package Type hFE 2SA2029 QRS Taping Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 − 2SA1037AK QRS − − − − − − − − − − − 2SA1576A QRS − 2SA1774 QRS − − 2SA933AS QRS − − hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560 − − − 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Transistors !Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 BASE TO EMITTER VOLTAGE : VBE (V) −0.4 −0.8 −1.2 DC CURRENT GAIN : hFE 25˚C 200 100 −40˚C 100 50 50 −250 −200 −150 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 TRANSITION FREQUENCY : fT (MHz) −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 1000 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Ta=25˚C VCE=−12V 200 100 50 1 2 5 10 20 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) 500 0.5 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) lC/lB=10 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE=−6V −5 −10 −20 −50 −100 −2 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C 200 Ta=25˚C −40 Fig.2 Grounded emitter output characteristics (I) VCE=−5V −3V −1V Ta=25˚C −60 IB=0 −1.6 −2.0 500 500 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage