RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1. Gate 2. Source 3. Drain 4. Source 1 4 2, 4 Note: Marking is “SX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Symbol Ratings Unit Drain to source voltage Item VDSS 16 V Gate to source voltage Drain current Channel dissipation Channel temperature VGSS ID Pchnote Tch ±5 3.2 15 150 V A W °C Storage temperature Tstg –55 to +150 °C Note: Value at Tc = 25°C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 1 of 12 RQA0009SXAQS Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout Power Added Efficiency Output Power PAE Pout Power Added Efficiency PAE Min. — — 0.15 — — — — — — — — — — Typ — — 0.5 3.2 76 40 3.5 37.8 6.0 65 35.2 3.3 60 Max. 15 ±2 0.8 — — — — — — — — — — Unit µA µA V S pF pF pF dBm W % dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 1.6 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 6 V, VGS = 0, f = 1 MHz VDG = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, IDQ = 180 mA f = 520 MHz, Pin = +25 dBm (316 mW) VDS = 4.8 V, IDQ = 300 mA f = 465 MHz, Pin = +17 dBm (50 mW) Main Characteristics Typical Output Characteristics 20 Pulse Test 4 Drain Current ID (A) 2.0 V 15 10 5 0 0 50 100 150 1.5 V 2 1.25 V 1 VGS = 1.0 V 0 2 4 6 8 10 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Transfer Characterisitics Forward Transfer Admittance vs. Drain Current 4 VDS = 6 V Pulse Test 3 |yfs| 2 ID 1 0 0 1.75 V 3 0 200 0.5 1.0 1.5 2.0 Gate to Source Voltage VGS (V) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 2 of 12 Forward Transfer Admittance |yfs| (S) Drain Current ID (A) Forward Transfer Admittance |yfs| (S) Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve 10.0 VDS = 6 V Pulse Test 1.0 0.1 0.1 1.0 Drain Current ID (A) 10.0 RQA0009SXAQS Input Capacitance vs. Gate to Source Voltage Output Capacitance vs. Drain to Source Voltage 80 70 60 50 VDS = 0 f = 1 MHz Reverse Transfer Capacitance Crss (pF) 40 -5 -4 -3 -2 -1 0 1 2 3 4 Output Capacitance Coss (pF) 1000 5 100 VGS = 0 f = 1 MHz 10 0.1 10 1 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Transfer Capacitance vs. Drain to Gate Voltage MSG, MAG vs. Frequency 100 VGS = 0 f = 1 MHz 10 1 0.1 1 Drain to Gate Voltage VDG (V) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 3 of 12 10 Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) Input Capacitance Ciss (pF) 90 30 VDS = 6 V ID = 180 mA 25 MSG 20 15 MAG 10 5 0 0 500 1000 1500 Frequency f (MHz) 2000 RQA0009SXAQS Evaluation Circuit (f = 520 MHz) C6 C5 C13 C12 VG VD R2 C4 C11 R1 L1 L2 50 Ω C1 IN C10 50 Ω L3 OUT C2 C1, C4, C10, C11 C2 C3 C5, C12 C6, C13 C7 C8 C9 L1 L2 L3 R1 R2 C3 C7 100 pF Chip Capacitor 22 pF Chip Capacitor 5 pF Chip Capacitor 1000 pF Chip Capacitor 1 µF Chip Tantalum Capacitor 18 pF Chip Capacitor 10 pF Chip Capacitor 7 pF Chip Capacitor 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire 1 nH Chip Inductor 1.8 nH Chip Inductor 670 Ω Chip Resistor 6.8 kΩ Chip Resistor REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 4 of 12 C8 C9 RQA0009SXAQS Output Power, Drain Current vs. Input Power 1.6 25 1.0 ID 20 0.8 15 0.6 10 0.4 VDS = 6 V f = 520 MHz IDQ = 180 mA 5 5 10 15 20 10 40 VDS = 6 V f = 520 MHz IDQ = 180 mA 5 0 20 5 10 15 0 30 25 20 Input Power Pin (dBm) Power Gain, Power Added Efficiency vs. Frequency Input Return Loss vs. Frequency PAE 60 15 PG 10 40 5 20 VDS = 6 V IDQ = 180 mA Pin = 25 dBm 0 450 470 490 510 530 0 550 0 Input Return Loss RL (dB) 80 Power Added Efficiency PAE (%) -5 -10 -15 VDS = 6 V IDQ = 180 mA Pin = 25 dBm -20 450 470 490 510 530 550 Frequency f (MHz) Frequency f (MHz) Power Gain, Power Added Efficiency, vs. Drain to Source Voltage Power Gain, Power Added Efficiency vs. Idling Current 70 20 PAE 60 15 PG 50 10 5 0 3 40 IDQ = 180 mA f = 520 MHz Pin = 25 dBm 4 5 6 7 8 Drain to Source Voltage VDS (V) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 5 of 12 9 30 20 Power Gain PG (dB) Power Gain PG (dB) 60 PAE Input Power Pin (dBm) 20 Power Gain PG (dB) 15 0 0 30 25 80 PG 0.2 0 0 20 80 15 75 PG 10 5 0 0 70 PAE VDS = 6 V f = 520 MHz Pin = 25 dBm 0.1 0.2 0.3 0.4 Idling Current IDQ (A) 65 60 0.5 Power Added Efficiency PAE (%) 1.2 30 Power Gain PG (dB) 1.4 Pout Drain Current ID (A) 35 100 25 Power Added Efficiency PAE (%) Output Power Pout (dBm) 40 Power Added Efficiency PAE (%) Power Gain, Power Added Efficiency vs. Input Power RQA0009SXAQS Evaluation Circuit (f = 465 MHz) C7 C6 C13 C14 VG VD R2 C5 C12 R1 L3 L1 50 Ω C1 L2 C11 50 Ω RFOUT RFIN C2 C1, C5, C11, C12 C2, C8 C3 C4, C9, C10 C6, C13 C7, C14 L1 L2 L3 R1 R2 C3 C4 C8 100 pF Chip Capacitor 22 pF Chip Capacitor 15 pF Chip Capacitor 10 pF Chip Capacitor 2200 pF Chip Capacitor 1 µF / 35 V Chip Tantalum Capacitor 1 nH Chip Inductor 1.8 nH Chip Inductor 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire 670 Ω Chip Resistor 6.8 kΩ Chip Resistor REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 6 of 12 C9 C10 RQA0009SXAQS 1.6 25 1.0 ID 20 0.8 15 0.6 10 0.4 VDS = 4.8 V IDQ = 300 mA f = 465 MHz 5 5 10 15 20 25 20 80 15 60 10 40 PAE VDS = 4.8 V IDQ = 300 mA f = 465 MHz 5 0.2 20 0 0 30 0 5 10 15 20 0 30 25 Input Power Pin (dBm) Power Gain, Power Added Efficiency vs. Frequency Input Return Loss vs. Frequency 80 19 70 PAE 18 60 PG 17 50 VDS = 4.8 V IDQ = 300 mA Pin = 17 dBm 16 450 455 460 465 470 475 40 480 0 Input Return Loss RL (dB) 20 Power Added Efficiency PAE (%) Input Power Pin (dBm) -5 -10 -15 -20 VDS = 4.8 V IDQ = 300 mA Pin = 17 dBm -25 -30 450 455 460 465 470 475 480 Frequency f (MHz) Frequency f (MHz) Power Gain, Power Added Efficiency, vs. Drain to Source Voltage Power Gain, Power Added Efficiency vs. Idling Current PG 65 20 60 19 PAE 18 55 17 50 IDQ = 300 mA f = 465 MHz Pin = 17 dBm 16 15 3 4 5 6 7 Drain to Source Voltage VDS (V) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 7 of 12 45 8 40 70 21 Power Gain PG (dB) 70 21 20 65 PAE 60 19 PG 18 55 17 50 VDS = 4.8 V f = 465 MHz Pin = 17 dBm 16 15 0 0.1 0.2 0.3 0.4 Idling Current IDQ (A) 45 40 0.5 Power Added Efficiency PAE (%) 1.2 Power Gain PG (dB) 30 PG Drain Current ID (A) Pout 0 Power Gain PG (dB) 100 1.4 35 0 Power Gain PG (dB) 25 Power Added Efficiency PAE (%) Output Power Pout (dBm) 40 Power Added Efficiency PAE (%) Power Gain, Power Added Efficiency vs. Input Power Output Power, Drain Current vs. Input Power RQA0009SXAQS S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 5 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -60° -120° -1.5 -90° Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.01 / div. 90° .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 8 of 12 -2 -.6 -.8 -1 -1.5 Test condition: VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) RQA0009SXAQS S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 5 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -60° -120° -1.5 -90° Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.01 / div. 90° .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 -.2 -30° -150° -3 -.4 -60° -120° -90° Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 9 of 12 -2 -.6 -.8 -1 -1.5 Test condition: VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω 100 to 1000 MHz (50 MHz step) 1000 to 2500 MHz (100 MHz step) RQA0009SXAQS S Parameter (VDS = 6 V, IDQ = 180 mA, Zo = 50 Ω) f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 S11 MAG ANG (deg.) S21 MAG ANG (deg.) S12 MAG ANG (deg.) S22 MAG ANG (deg.) 0.868 0.861 0.882 0.892 0.899 0.910 0.918 0.926 0.932 0.936 0.940 0.941 0.944 0.945 0.944 0.944 0.943 0.943 0.946 0.949 0.951 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.953 0.958 0.965 0.963 0.956 0.950 0.944 0.936 0.932 0.932 0.929 0.923 0.917 9.85 5.42 3.64 2.64 2.06 1.61 1.28 1.04 0.84 0.73 0.62 0.54 0.45 0.41 0.37 0.31 0.30 0.26 0.23 0.22 0.21 0.18 0.18 0.16 0.14 0.14 0.13 0.12 0.11 0.11 0.10 0.10 0.09 0.08 0.08 0.08 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.06 0.05 0.05 0.05 0.05 0.05 0.019 0.018 0.016 0.016 0.014 0.013 0.013 0.011 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.004 0.004 0.004 0.005 0.005 0.006 0.006 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.017 0.017 0.706 0.725 0.755 0.768 0.792 0.805 0.827 0.840 0.855 0.869 0.880 0.892 0.901 0.906 0.915 0.919 0.929 0.930 0.936 0.940 0.943 0.944 0.950 0.951 0.949 0.956 0.958 0.957 0.956 0.959 0.960 0.960 0.962 0.967 0.968 0.965 0.967 0.976 0.972 0.972 0.976 0.981 0.977 0.977 0.978 0.981 0.977 0.977 0.980 -154.0 -159.4 -163.9 -166.8 -169.5 -171.6 -173.4 -175.2 -176.8 -178.2 -179.5 179.2 178.1 176.9 175.9 174.6 173.4 172.3 171.1 170.2 169.4 168.7 167.8 167.0 166.2 165.4 164.6 164.0 163.3 162.1 160.8 159.7 158.5 157.3 156.4 155.7 154.7 153.9 153.6 153.3 152.9 152.2 151.6 150.7 149.3 148.1 147.3 146.3 144.9 REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 10 of 12 88.8 77.2 68.2 58.5 51.8 45.1 40.3 36.0 31.8 28.8 26.4 23.1 20.2 18.3 16.4 13.9 12.1 10.6 8.6 7.3 6.5 5.3 4.3 3.7 2.2 1.3 0.8 0.1 -0.8 -1.8 -2.7 -3.6 -4.5 -4.7 -5.0 -4.7 -4.9 -5.2 -4.6 -4.9 -4.2 -3.5 -3.8 -3.5 -3.4 -3.6 -3.0 -3.6 -3.0 1.2 -6.3 -14.1 -19.2 -22.1 -27.2 -29.3 -34.1 -33.1 -34.5 -34.6 -36.5 -32.7 -32.0 -25.3 -22.3 -15.2 0.3 9.1 20.6 36.9 40.3 52.0 53.2 56.8 60.9 64.0 62.2 65.4 65.9 65.6 65.9 66.6 66.2 66.5 66.5 67.0 67.0 65.5 65.4 65.3 65.2 63.9 63.9 63.0 62.8 63.0 61.3 61.8 -166.8 -168.9 -170.6 -170.6 -171.2 -171.5 -172.2 -173.1 -173.8 -174.6 -175.6 -176.5 -177.3 -178.0 -179.4 180.0 178.9 178.1 177.2 176.5 175.5 174.7 174.1 173.3 172.6 171.7 171.0 170.3 169.5 168.5 168.2 167.4 166.4 165.8 165.3 164.5 163.7 163.2 162.9 161.9 161.0 160.7 160.1 159.5 158.9 158.4 158.0 157.2 156.8 RQA0009SXAQS S Parameter (VDS = 4.8 V, IDQ = 300 mA, Zo = 50 Ω) f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 S11 MAG ANG (deg.) S21 MAG ANG (deg.) S12 MAG ANG (deg.) S22 MAG ANG (deg.) 0.772 0.794 0.812 0.818 0.824 0.831 0.836 0.841 0.848 0.851 0.851 0.852 0.854 0.858 0.865 0.873 0.878 0.880 0.882 0.886 0.889 0.893 0.898 0.902 0.901 0.902 0.904 0.907 0.904 0.905 0.912 0.915 0.919 0.926 0.938 0.942 0.942 0.945 0.946 0.942 0.939 0.940 0.942 0.939 0.937 0.937 0.935 0.932 0.931 9.63 5.54 3.91 2.98 2.36 1.92 1.60 1.36 1.15 1.00 0.87 0.77 0.69 0.60 0.54 0.49 0.45 0.41 0.37 0.35 0.32 0.29 0.27 0.26 0.23 0.22 0.21 0.19 0.18 0.17 0.16 0.15 0.14 0.14 0.13 0.13 0.12 0.11 0.11 0.11 0.10 0.10 0.09 0.09 0.08 0.08 0.08 0.07 0.07 0.013 0.013 0.012 0.011 0.011 0.011 0.010 0.009 0.008 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.011 0.012 0.012 0.012 0.013 0.013 0.014 0.014 0.014 0.014 0.776 0.784 0.799 0.805 0.818 0.824 0.837 0.843 0.859 0.868 0.874 0.887 0.896 0.901 0.905 0.911 0.918 0.922 0.932 0.931 0.935 0.939 0.944 0.943 0.948 0.948 0.954 0.954 0.953 0.958 0.959 0.956 0.958 0.964 0.965 0.963 0.965 0.968 0.965 0.969 0.973 0.974 0.974 0.974 0.976 0.977 0.972 0.975 0.977 -157.0 -162.8 -167.3 -170.4 -173.1 -175.0 -176.6 -178.3 -179.9 179.0 177.7 176.3 174.7 173.3 171.9 170.8 169.8 168.8 167.7 166.5 165.5 164.4 163.3 162.4 161.3 160.0 158.7 157.7 156.5 155.1 153.8 152.8 151.5 149.9 148.8 147.9 146.7 145.5 144.7 143.7 142.3 140.9 139.8 138.3 136.8 135.4 134.1 132.8 131.3 REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 11 of 12 88.9 79.0 71.6 64.7 59.1 53.6 48.7 44.8 40.5 37.1 33.9 30.7 27.9 24.8 22.3 20.2 17.9 16.1 14.2 12.4 10.7 8.9 7.5 6.2 4.7 3.3 1.8 0.4 -0.8 -2.4 -3.1 -4.2 -5.8 -6.8 -7.8 -8.6 -9.3 -10.2 -10.6 -11.2 -11.8 -12.5 -13.3 -14.3 -15.3 -16.3 -17.5 -18.1 -18.7 -1.0 -6.3 -11.1 -13.5 -15.2 -20.4 -21.4 -23.3 -22.9 -22.2 -24.8 -24.2 -20.5 -18.2 -15.1 -12.2 -1.7 4.3 11.2 21.6 29.8 33.2 40.9 46.7 50.8 54.5 57.8 55.3 60.5 62.1 61.1 64.3 63.2 62.7 63.0 62.6 61.9 63.8 62.4 62.2 61.2 62.0 61.3 59.2 59.6 59.8 58.9 57.9 57.7 -172.1 -173.8 -174.8 -174.8 -175.0 -175.1 -175.4 -175.8 -176.8 -177.1 -177.4 -177.8 -178.8 -179.1 -179.8 179.5 178.9 178.3 177.8 177.1 176.5 175.8 175.1 174.6 174.1 173.4 173.1 172.5 171.6 171.0 170.7 170.4 169.3 168.9 168.4 167.8 167.0 166.6 166.3 165.5 164.9 164.6 164.2 163.4 163.0 162.9 162.0 161.5 161.2 RQA0009SXAQS Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name RQA0009SXTL-E Quantity 1000 pcs. REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Page 12 of 12 Shipping Container φ178 mm reel, 12 mm emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. 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Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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