2SC2853 Silicon NPN Epitaxial REJ03G0708-0300 (Previous ADE-208-1078A) Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 90 90 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2SC2853 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 6 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 90 90 5 — — 400 — — — — Typ — — — — — — 0.05 0.7 310 3 Max — — — 0.1 0.1 800 0.10 1.0 — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC2853 Main Characteristics Typical Output Characteristics 20 400 150 W 100 20 18 16 14 12 10 m 50 12 0 0 24 22 16 40 200 26 = Collector Current IC (mA) 600 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 8 8 6 4 2 µA IB = 0 4 20 0 Ambient Temperature Ta (°C) 40 60 80 100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Transfer Characteristics 10 8 14 6 12 10 8 4 6 4 2 2 µA IB = 0 4 0 8 12 16 Ta = 75°C 10 25°C –25°C 1.0 0.1 20 0 Collector to Emitter Voltage VCE (V) Collector Cut-Off Current ICEO (nA) Collector Cut-Off Current ICBO (pA) Ta 75 C 25 –25 10 1.0 0.1 0 20 40 60 80 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 3 of 6 0.4 0.6 0.8 1.0 Collector Cut-Off Current vs. Collector to Emitter Voltage 1,000 = 0.2 Base to Emitter Voltage VBE (V) Collector Cut-Off Current vs. Collector to Base Voltage 100 VCE = 6 V Pulse 100 16 Collector Current IC (mA) Collector Current IC (mA) 18 1,000 75° C = Ta 100 25 10 –25 1.0 0.1 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) 2SC2853 Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance = 5 25 –2 10 1.0 0.1 0 2 4 6 8 10 DC Current Transfer Ratio hFE 180 170 160 150 140 10 100 1k 10 k Collector to Emitter Saturation Voltage vs. Collector Current Ta = 75°C 25 –25 300 100 30 VCE = 12 V Pulse 3 10 30 1.0 Pulse IC = 10 IB 0.3 0.1 Ta = 75°C 25 –25 0.03 0.01 1 100 3 10 30 100 Collector Current IC (mA) Collector Current IC (mA) Base to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 10 Pulse IC = 10 IB 3 1.0 Ta =–25 C 75 25 0.3 0.1 1 100 k DC Current Transfer Ratio vs. Collector Current 10 Base to Emitter Saturation Voltage VBE(sat) (V) Typical Value IC = 1 mA Base to Emitter Resistance RBE (Ω) 1,000 1 190 Emitter to Base Voltage VEB (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 100 Collector to Emitter Breakdown Voltage V(BR)CER (V) 75 °C 1,000 Ta Emitter Cut-Off Current IEBO (pA) Emitter Cut-Off Current vs.Emitter to Base Voltage 3 10 30 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 6 100 1,000 VCE = 6 V 500 200 100 50 20 10 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 2SC2853 Noise Voltage Referred to Input vs. Collector Current 100 10 IE = 0 f = 1 MHz Noise Voltage Referred to Input Hz) en (nV/ √ Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 30 10 3 3 10 30 100 0.3 0.3 1.0 3 10 Collector Current IC (mA) Noise Voltage Referred to Input vs. Signal Source Resistance Noise Voltage Referred to Input vs. Collector to Emitter Voltage 1.0 VCE = 6 V f = 1 kHz 100 A IC = 10 m 0 1. 1 0. 10 1.0 0.1 10 0.9 0.8 0.7 IC = 1 mA Rg = 0 f = 1 kHz 0.6 0.5 100 1k 10 k 100 k Signal Source Resistance Rg (Ω) Noise Voltage Referred to Input vs. Frequency 2.0 VCE = 6 V Rg = 0 1.6 1.2 IC = 1 mA 0.8 10 0.4 0 10 Noise Voltage Referred to Input Hz) en (nV/ √ Noise Voltage Referred to Input Hz) en (nV/ √ 1.0 Collector to Base Voltage VCB (V) 1,000 Noise Voltage Referred to Input Hz) en (nV/ √ 3 0.1 0.1 1 1 VCE = 6 V Rg = 0 f = 1 kHz 100 1k 10 k Frequency f (Hz) Rev.2.00 Aug 10, 2005 page 5 of 6 100 k 1 3 10 30 100 Collector to Emitter Voltage VCE (V) 2SC2853 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2853ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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