Preliminary Datasheet LPM3401 - LPM3401 -20V/4.2A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. ■ -20V/-4.2A,RDC(ON)≤54mΩ(typ.)@VGS=-2.5V ■ -20V/-3.0A,RDC(ON)≤60mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely low RDC(ON) ■ SOT23 Package These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side Applications switching. Ordering Information LPM3401 □ □ □ Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card Marking Information F: Pb-Free Package Type B3: SOT23 Device Marking Package Shipping LPM3401B3F A1XXX SOT23-3 3K/REEL XXX : The production cycle and the batch. Pin Configurations SOT23L(Top View) LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com Page 1 of 6 Preliminary Datasheet LPM3401 Functional Pin Description LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com Page 2 of 6 Preliminary Datasheet LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com LPM3401 Page 3 of 6 Preliminary Datasheet LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com LPM3401 Page 4 of 6 Preliminary Datasheet LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com LPM3401 Page 5 of 6 Preliminary Datasheet LPM3401 Packaging Information LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com Page 6 of 6