END OF LIFE DECEMBER 2013

SUPER HIGH-POWER GaAlAs IR EMITTERS
.250
.262
GLASS
DOME
.324
.332
.357
.362
.100
.018
.246
.254
FEATURES
• Ultra high power output
• Four wire bonds on die corners
• Very narrow optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size .030 x .030 inches
.200
.031
CATHODE
.025
.071
.095
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins must be externally connected together.
20
13
ANODE
(CASE)
OD-50L
.040
45°
.500
PARAMETERS
MB
E
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
IF = 500mA
IF = 10A
IF = 500mA
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Forward Voltage, VF
IF = 50mA
DE
Half Intensity Beam Angle, θ
MIN
40
CE
Radiant Intensity, Ie
R
RoHS
Capacitance, C
IR = 10μA
5
FE
Fall Time
UNITS
mW
500
mW/sr
880
nm
80
nm
Deg
1.65
VR = 0V
Rise Time
MAX
7
IF = 500mA
Reverse Breakdown Voltage, VR
TYP
50
600
2
Volts
30
Volts
90
pF
0.7
μsec
0.7
μsec
Power Dissipation1
LI
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
1000mW
Continuous Forward Current
OF
500mA
Peak Forward Current (10μs, 400Hz)2
10A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
EN
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
150°C/W Typical
60°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
SUPER HIGH-POWER GaAlAs IR EMITTERS
THERMAL DERATING CURVE
100
POWER DISSIPATION (mW)
INFINITE
HEAT SINK
800
700
600
NO
HEAT SINK
500
400
300
200
100
0
100
25
50
75
AMBIENT TEMPERATURE (°C)
t = 10μs
10
t = 50μs
t = 100μs
1
t
T
0.1
0.01
100
D=
Ip
DEGRADATION CURVE
0.1
10
100
RADIATION PATTERN
80
MB
E
IF = 250mA
80
R
RELATIVE POWER OUTPUT (%)
90
70
60
40
20
CE
TCASE = 25°C
NO PRE BURN-IN PERFORMED
60
t
T
1
DUTY CYCLE, D (%)
100
IF = 150mA
RELATIVE POWER OUTPUT (%)
IF = 450mA
50
103
STRESS TIME, (hrs)
104
0
–25
105
FORWARD I-V CHARACTERISTICS
10
FE
8
6
LI
FORWARD CURRENT, IF (amps)
12
102
DE
101
RELATIVE POWER OUTPUT
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
900
PEAK FORWARD CURRENT, Ip (amps)
1,000
MAXIMUM PEAK PULSE CURRENT
20
13
1,100
OD-50L
4
2
–20
–15
–10
–5
0
5
10
BEAM ANGLE, θ(deg)
15
20
25
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
OF
0.6
0.5
–50
0
0
2
4
6
FORWARD VOLTAGE, VF (volts)
8
10
SPECTRAL OUTPUT
75
100
POWER OUTPUT vs FORWARD CURRENT
D
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
0
25
50
AMBIENT TEMPERATURE (°C)
1,000
100
EN
–25
60
40
100
10
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
DC
PULSE
10μs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013