SUPER HIGH-POWER GaAlAs IR EMITTERS .250 .262 GLASS DOME .324 .332 .357 .362 .100 .018 .246 .254 FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead TO-39 hermetic package • Chip size .030 x .030 inches .200 .031 CATHODE .025 .071 .095 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. 20 13 ANODE (CASE) OD-50L .040 45° .500 PARAMETERS MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Forward Voltage, VF IF = 50mA DE Half Intensity Beam Angle, θ MIN 40 CE Radiant Intensity, Ie R RoHS Capacitance, C IR = 10μA 5 FE Fall Time UNITS mW 500 mW/sr 880 nm 80 nm Deg 1.65 VR = 0V Rise Time MAX 7 IF = 500mA Reverse Breakdown Voltage, VR TYP 50 600 2 Volts 30 Volts 90 pF 0.7 μsec 0.7 μsec Power Dissipation1 LI ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 1000mW Continuous Forward Current OF 500mA Peak Forward Current (10μs, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 100°C 150°C/W Typical 60°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS THERMAL DERATING CURVE 100 POWER DISSIPATION (mW) INFINITE HEAT SINK 800 700 600 NO HEAT SINK 500 400 300 200 100 0 100 25 50 75 AMBIENT TEMPERATURE (°C) t = 10μs 10 t = 50μs t = 100μs 1 t T 0.1 0.01 100 D= Ip DEGRADATION CURVE 0.1 10 100 RADIATION PATTERN 80 MB E IF = 250mA 80 R RELATIVE POWER OUTPUT (%) 90 70 60 40 20 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 60 t T 1 DUTY CYCLE, D (%) 100 IF = 150mA RELATIVE POWER OUTPUT (%) IF = 450mA 50 103 STRESS TIME, (hrs) 104 0 –25 105 FORWARD I-V CHARACTERISTICS 10 FE 8 6 LI FORWARD CURRENT, IF (amps) 12 102 DE 101 RELATIVE POWER OUTPUT TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 13 1,100 OD-50L 4 2 –20 –15 –10 –5 0 5 10 BEAM ANGLE, θ(deg) 15 20 25 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 75 100 POWER OUTPUT vs FORWARD CURRENT D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) 1,000 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013