PHOTODIODE 331 mm2 AXUV300C

PHOTODIODE 331 mm2
AXUV300C
FEATURES
•
•
•
•
•
Rectangular active area
Large detection area
2 anode and cathode pins
Ideal for electron detection
No window for extended
response to below 200nm
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
TEST CONDITIONS
MIN
21.56mm x 15.36mm
MAX
331
UNITS
mm2
(see graphs on next page)
Conductive Current, IC
Vf = 0.8V
1
Breakdown Voltage, VR
IR = 1µA
5
Capacitance, C
VR = 0V
Response Time
VR = 15V
Rshunt
TYP
@ ± 10mV
mA
Volts
25
40
5
nF
15
usec
20
MΩ
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C2
-20°C TO 80°C
70°C
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over timeresponsivity tol ow energy radiation and wavelengths below 150nm will be compromised.
2
0.08" from case for 10 seconds.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision April 14, 2015
PHOTODIODE 331 mm2
RESPONSIVITY (A/W)
0.30
AXUV300C
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision April 14, 2015
152