axuvps7 - Opto Diode Corp.

QUAD ELECTRON DETECTOR 15 mm2
AXUVPS7
Dimensions are in inch [metric] units.
FEATURES
• Ideal for electron detection
• Circular active area
• 100% internal QE
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
mm2
15
Active Area
UNITS
(see graphs on the next page)
0.07
VR = ±10mV
10
MOhms
Reverse Breakdown Voltage, VR
IR = 1µA
5
Volts
Capacitance, C
VR = 0V
Responsivity, R
Shunt Resistance, RsH
0.08
1.5
VR = 2V, RL = 50Ω
Rise Time
0.09
A/W
nF
2
usec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
-10° TO 40°C1
Nitrogen or Vacuum
-20°C TO 80°C
70°C
Maximum Junction Temperature
Lead soldering temperature
2
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
2
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
ELECTRON DETECTION 15 mm2
RESPONSIVITY (A/W)
0.30
AXUVPS7
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013