NIR/RED ENHANCED 5 mm2 PHOTODIODE

NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER
FEATURES
.050 MIN
.085
+V
ODA-5W-100K
• Large active area
.078
Vout
• Low noise
CASE
∅.370
∅.358
.031
.035
• High sensitivity
• Custom gains available
(∅.325)
∅.016
∅.019
–V
GND
• Hermetically sealed TO-39
.028
(∅.200 PIN CTRS)
(.012 MAX)
.163
SHOWN WITH CAP REMOVED FOR CLARITY
RoHS
R1
C1
3
IN
D1
+V
–
IN +
U1
0.1 ufd
4
1
2
–V
V OUT
0.1 ufd
ELECTRO-OPTICAL CHARACTERISTICS AT 23°C
PARAMETERS
Dark Offset
Dark Offset Noise
Sensitivity
Frequency Response (-3 db)
NEP
Transimpedence Gain
Supply Current
TEST CONDITIONS
Vs = ± 15 V
BW = 0.1 to 800 kHz
TYP
477
Vs = ± 15
MAX
UNITS
1000
µV rms
± 1.0
mV
Vs = ± 15
55
63
V/mW
Vs = ± 15
500
800
kHz
λ = 940 nm
6.76
pW/√Hz
Vs = ± 15 V
6.2
λ = 940 nm
λ = 940 nm
THERMAL PARAMETERS
Voltage Supplies
Power Dissipation
Storage and Operating Temperature
MIN
Soldering Temperature (1/16" from case for 3 secconds max)
100
7.5
kΩ
mA
± 5 to ± 15V
225 mW
–25° to +100° C
+260° C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER
ODA-5W-100K
TYPICAL SPECTRAL RESPONSE
70
RESPONSIVITY (V/mW)
60
50
40
30
20
10
0
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013