RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 1 of 6 Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 Ratings 500 ±30 12 24 12 24 4 Unit V V A A A A A EARNote3 Pch Note2 θch-c Tch Tstg 0.88 30 4.17 150 –55 to +150 mJ W °C/W °C °C RJK5012DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 3.0 — Typ — — — — 0.515 Max — 1 ±0.1 4.5 0.620 Unit V µA µA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1100 120 15 30 23 77 16 29 5.5 13 0.89 — — — — — — — — — — 1.50 pF pF pF ns ns ns ns nC nC nC V trr — 280 — ns Body-drain diode reverse recovery time Notes: 5. Pulse test REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 41.6 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 Note5 IF = 12 A, VGS = 0 diF/dt = 100 A/µs RJK5012DPP Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 60 40 20 0 50 100 150 10 10 0 10 1 DC Operation (Tc = 25°C) 0.1 µs 1 1000 100 10 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 6V 7V 16 10 V 5.6 V 12 5.4 V 8 5.2 V VGS = 5 V 4 VDS = 10 V Pulse Test 50 5.8 V Drain Current ID (A) Pulse Test 20 10 5 2 1 Tc = 75°C 0.5 25°C −25°C 0.2 0.1 0 4 8 12 16 0 20 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 100 300 Drain Current ID (A) REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 3 of 6 1000 Static Drain to Source on State Resistance RDS(on) (Ω) Drain to Source on State Resistance RDS(on) (Ω) µs PW = 10 ms (1shot) Operation in this area is limited by 0.01 RDS(on) 0.001 0.1 200 20 Drain Current ID (A) Ta = 25°C s Drain Current ID (A) 100 1m Channel Dissipation Pch (W) 80 2.0 VGS = 10 V 1.6 1.2 ID = 12 A 3A 0.8 6A 0.4 Pulse Test 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RJK5012DPP Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 10000 500 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 3 10 30 100 Reverse Drain Current 300 300 100 Coss 30 10 IDR (A) 8 16 0 24 Gate Charge 32 40 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) 5 ID = 10 mA 4 1 mA 3 0.1 mA 2 1 VDS = 10 V 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 4 of 6 IDR (A) 4 VDD = 400 V 250 V 100 V 300 VDS (V) 20 Reverse Drain Current 8 200 0 16 12 VDS 200 Reverse Drain Current vs. Source to Drain Voltage VGS (V) VDD = 100 V 250 V 400 V 600 400 VGS 100 Drain to Source Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 12 A Crss 1 0 1000 Dynamic Input Characteristics 800 Ciss 1000 3 1 1 VGS = 0 f = 1 MHz Pulse Test 16 12 10 V 8 5V 4 VGS = 0 V, −5 V 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) RJK5012DPP Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 TC = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θch–c(t) = γS (t) • θch–c θch–c = 4.17°C/W, TC = 25°C PDM PW D= T PW T e uls tP 0.01 ho 1S 0.001 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V VDD = 250 V Vin Vout 10% 10% 10% 90% td(on) REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 5 of 6 tr 90% td(off) tf RJK5012DPP Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Part No. RJK5012DPP-00-T2 Quantity 1050 pcs REJ03G1545-0100 Rev.1.00 May 10, 2007 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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